BSC252N10NSFGATMA1
vs
2SK3589-01
feature comparison
Pbfree Code |
No
|
|
Rohs Code |
Yes
|
|
Part Life Cycle Code |
Active
|
Obsolete
|
Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
FUJI ELECTRIC CO LTD
|
Package Description |
SMALL OUTLINE, R-PDSO-F5
|
CHIP CARRIER, S-XBCC-N4
|
Pin Count |
8
|
4
|
Reach Compliance Code |
not_compliant
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Factory Lead Time |
18 Weeks
|
|
Samacsys Manufacturer |
Infineon
|
|
Avalanche Energy Rating (Eas) |
68 mJ
|
319.2 mJ
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
100 V
|
100 V
|
Drain Current-Max (ID) |
7.2 A
|
6.9 A
|
Drain-source On Resistance-Max |
0.0252 Ω
|
0.025 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-PDSO-F8
|
S-XBCC-N4
|
JESD-609 Code |
e3
|
|
Moisture Sensitivity Level |
1
|
|
Number of Elements |
1
|
1
|
Number of Terminals |
8
|
4
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Package Body Material |
PLASTIC/EPOXY
|
UNSPECIFIED
|
Package Shape |
RECTANGULAR
|
SQUARE
|
Package Style |
SMALL OUTLINE
|
CHIP CARRIER
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
160 A
|
292 A
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
Tin (Sn)
|
|
Terminal Form |
FLAT
|
NO LEAD
|
Terminal Position |
DUAL
|
BOTTOM
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
1
|
Power Dissipation-Max (Abs) |
|
135 W
|
|
|
|
Compare BSC252N10NSFGATMA1 with alternatives
Compare 2SK3589-01 with alternatives