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Power Field-Effect Transistor, 23A I(D), 30V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
50Y1808
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Newark | Mosfet Transistor, N Channel, 100 A, 30 V, 0.0023 Ohm, 10 V, 2 V Rohs Compliant: Yes |Infineon BSC0902NSIATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 9359 |
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$0.4630 / $0.8740 | Buy Now |
DISTI #
BSC0902NSIATMA1CT-ND
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DigiKey | MOSFET N-CH 30V 23A/100A TDSON Min Qty: 1 Lead time: 20 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
24774 In Stock |
|
$0.4459 / $0.8400 | Buy Now |
DISTI #
BSC0902NSIATMA1
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Avnet Americas | Trans MOSFET N-CH 30V 23A 8-Pin TDSON EP T/R - Tape and Reel (Alt: BSC0902NSIATMA1) RoHS: Not Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
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$0.4162 / $0.4757 | Buy Now |
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Future Electronics | Single N-Channel 30 V 2.8 mOhm 32 nC OptiMOS™ Power Mosfet - PowerTDFN-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Container: Reel | 0Reel |
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$0.3950 / $0.4050 | Buy Now |
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Future Electronics | Single N-Channel 30 V 2.8 mOhm 32 nC OptiMOS™ Power Mosfet - PowerTDFN-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Container: Reel | 0Reel |
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$0.3950 / $0.4050 | Buy Now |
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Rochester Electronics | BSC0902NSI - TRENCH <= 40V RoHS: Compliant Status: Active Min Qty: 1 | 21573 |
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$0.4422 / $0.5202 | Buy Now |
DISTI #
BSC0902NSIATMA1
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TME | Transistor: N-MOSFET, unipolar, 30V, 89A, 48W, PG-TDSON-8 Min Qty: 1 | 4614 |
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$0.5630 / $1.1040 | Buy Now |
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Ameya Holding Limited | MOSFET N-CH 30V 100A 8TDSON | 5000 |
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RFQ | |
DISTI #
SP000854380
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EBV Elektronik | Trans MOSFET N-CH 30V 23A 8-Pin TDSON EP T/R (Alt: SP000854380) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 21 Weeks, 0 Days | EBV - 0 |
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Buy Now |
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BSC0902NSIATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSC0902NSIATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 23A I(D), 30V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
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Pbfree Code | No | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PDSO-F5 | |
Pin Count | 8 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 20 Weeks | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 20 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 23 A | |
Drain-source On Resistance-Max | 0.0037 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-F8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 400 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for BSC0902NSIATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC0902NSIATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
BSC030N03MSGATMA1 | Power Field-Effect Transistor, 21A I(D), 30V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | BSC0902NSIATMA1 vs BSC030N03MSGATMA1 |
BSC025N03LSGATMA1 | Power Field-Effect Transistor, 25A I(D), 30V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | BSC0902NSIATMA1 vs BSC025N03LSGATMA1 |