Part Details for BSC025N03LSGATMA1 by Infineon Technologies AG
Overview of BSC025N03LSGATMA1 by Infineon Technologies AG
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for BSC025N03LSGATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 3795 |
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RFQ | ||
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Bristol Electronics | Min Qty: 4 | 105 |
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$0.4922 / $1.3125 | Buy Now |
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Quest Components | 3036 |
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$0.6251 / $2.0835 | Buy Now | |
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Quest Components | 84 |
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$0.5250 / $1.7500 | Buy Now | |
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Rochester Electronics | BSC025N03 - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 | 13329 |
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$0.4910 / $0.5776 | Buy Now |
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DISTI #
BSC025N03LSGATMA1
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TME | Transistor: N-MOSFET, unipolar, 30V, 100A, 83W, PG-TDSON-8 Min Qty: 1 | 0 |
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$0.7800 / $1.2300 | RFQ |
Part Details for BSC025N03LSGATMA1
BSC025N03LSGATMA1 CAD Models
BSC025N03LSGATMA1 Part Data Attributes
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BSC025N03LSGATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSC025N03LSGATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 25A I(D), 30V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PDSO-F8 | |
| Pin Count | 8 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | |
| Avalanche Energy Rating (Eas) | 135 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 25 A | |
| Drain-source On Resistance-Max | 0.0036 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-F8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 400 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for BSC025N03LSGATMA1
This table gives cross-reference parts and alternative options found for BSC025N03LSGATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC025N03LSGATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BSC030N03MSGATMA1 | Power Field-Effect Transistor, 21A I(D), 30V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | BSC025N03LSGATMA1 vs BSC030N03MSGATMA1 |
| BSC0902NSIATMA1 | Power Field-Effect Transistor, 23A I(D), 30V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | BSC025N03LSGATMA1 vs BSC0902NSIATMA1 |