Part Details for BSC028N03MSCGATMA1 by Infineon Technologies AG
Overview of BSC028N03MSCGATMA1 by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part Details for BSC028N03MSCGATMA1
BSC028N03MSCGATMA1 CAD Models
BSC028N03MSCGATMA1 Part Data Attributes
|
BSC028N03MSCGATMA1
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
BSC028N03MSCGATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 21A I(D), 30V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
|
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PDSO-F8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 75 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 21 A | |
Drain-source On Resistance-Max | 0.0036 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-F8 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 400 A | |
Surface Mount | YES | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for BSC028N03MSCGATMA1
This table gives cross-reference parts and alternative options found for BSC028N03MSCGATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC028N03MSCGATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
BSC025N03MSGATMA1 | Power Field-Effect Transistor, 23A I(D), 30V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | BSC028N03MSCGATMA1 vs BSC025N03MSGATMA1 |
FDMS0308CS | 30V N-Channel PowerTrench® SyncFET™, 8LD,PQFN,JEDEC MO240 AA,5.0X6.0MM, CLIPBOND, 3000/TAPE REEL | Fairchild Semiconductor Corporation | BSC028N03MSCGATMA1 vs FDMS0308CS |
NTMFS4983NFT3G | Single N-Channel Power MOSFET 30V, 106A, 2.1mΩ, DFN5 5X6, 1.27P (SO 8FL), 5000-REEL | onsemi | BSC028N03MSCGATMA1 vs NTMFS4983NFT3G |
NTMFS4983NFT1G | Single N-Channel Power MOSFET 30V, 106A, 2.1mΩ, DFN5 5X6, 1.27P (SO 8FL), 1500-REEL | onsemi | BSC028N03MSCGATMA1 vs NTMFS4983NFT1G |