Part Details for BLL6H1214-500,112 by Ampleon
Overview of BLL6H1214-500,112 by Ampleon
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- Number of FFF Equivalents:
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- Number of Functional Equivalents:
- Part Data Attributes
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Applications
Consumer Electronics
Audio and Video Systems
Entertainment and Gaming
Automotive
Price & Stock for BLL6H1214-500,112
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
568-7559-ND
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DigiKey | RF MOSFET LDMOS 50V SOT539A Min Qty: 1 Lead time: 16 Weeks Container: Tray |
178 In Stock |
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$597.2200 | Buy Now |
|
DISTI #
BLL6H1214-500,112
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Avnet Americas | Trans MOSFET N-CH 100V 72A 5-Pin LDMOST Blister - Rail/Tube (Alt: BLL6H1214-500,112) RoHS: Compliant Min Qty: 60 Package Multiple: 60 Lead time: 16 Weeks, 0 Days Container: Tube | 0 |
|
$630.6696 / $735.7812 | Buy Now |
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DISTI #
BLL6H1214-500,112
|
Avnet Americas | Trans MOSFET N-CH 100V 72A 5-Pin LDMOST Blister - Rail/Tube (Alt: BLL6H1214-500,112) RoHS: Compliant Min Qty: 60 Package Multiple: 60 Lead time: 16 Weeks, 0 Days Container: Tube | 0 |
|
$630.6696 / $735.7812 | Buy Now |
|
DISTI #
BLL6H1214-500,112
|
Avnet Americas | Trans MOSFET N-CH 100V 72A 5-Pin LDMOST Blister - Rail/Tube (Alt: BLL6H1214-500,112) RoHS: Compliant Min Qty: 60 Package Multiple: 60 Lead time: 16 Weeks, 0 Days Container: Tube | 0 |
|
$630.6696 / $735.7812 | Buy Now |
|
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Flip Electronics | Stock | 60 |
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RFQ |
Part Details for BLL6H1214-500,112
BLL6H1214-500,112 CAD Models
BLL6H1214-500,112 Part Data Attributes
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BLL6H1214-500,112
Ampleon
Buy Now
Datasheet
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Compare Parts:
BLL6H1214-500,112
Ampleon
RF Power Field-Effect Transistor, 2-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-4
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| Rohs Code | Yes | |
| Part Life Cycle Code | Contact Manufacturer | |
| Ihs Manufacturer | AMPLEON NETHERLANDS B V | |
| Package Description | FLANGE MOUNT, R-CDFM-F4 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Ampleon USA Inc. | |
| Case Connection | SOURCE | |
| Configuration | COMMON SOURCE, 2 ELEMENTS | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 45 A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Highest Frequency Band | L BAND | |
| JESD-30 Code | R-CDFM-F4 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 245 | |
| Polarity/Channel Type | N-CHANNEL | |
| Reference Standard | IEC-60134 | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON |