Part Details for BLF647,112 by NXP Semiconductors
Overview of BLF647,112 by NXP Semiconductors
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (2 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Price & Stock for BLF647,112
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
70R2868
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Newark | Mosfet, Rf, N Channel, 65V, 18A, Sot-540A-5, Drain Source Voltage Vds:65V, Continuous Drain Current Id:18A, Power Dissipation:290W, Operating Frequency Min:-, Operating Frequency Max:600Mhz, No. Of Pins:5Pins, Channel Type:N Channel Rohs Compliant: Yes |Nxp BLF647,112 Min Qty: 60 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Part Details for BLF647,112
BLF647,112 CAD Models
BLF647,112 Part Data Attributes:
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BLF647,112
NXP Semiconductors
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Datasheet
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Compare Parts:
BLF647,112
NXP Semiconductors
BLF647
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Part Package Code | SOT | |
| Pin Count | 2 | |
| Manufacturer Package Code | SOT540A | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.75 | |
| Case Connection | SOURCE | |
| Configuration | COMMON SOURCE, 2 ELEMENTS | |
| DS Breakdown Voltage-Min | 65 V | |
| Drain Current-Max (ID) | 18 A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Highest Frequency Band | ULTRA HIGH FREQUENCY BAND | |
| JESD-30 Code | R-CDFM-F4 | |
| Number of Elements | 2 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 200 °C | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 290 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON |
Alternate Parts for BLF647,112
This table gives cross-reference parts and alternative options found for BLF647,112. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BLF647,112, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| 934056498112 | TRANSISTOR 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC, LDMOST, 4 PIN, FET RF Power | NXP Semiconductors | BLF647,112 vs 934056498112 |
| BLF647 | TRANSISTOR 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, FET RF Power | NXP Semiconductors | BLF647,112 vs BLF647 |