Datasheets
BLF578 by:

TRANSISTOR 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-4, FET RF Power

Part Details for BLF578 by NXP Semiconductors

Overview of BLF578 by NXP Semiconductors

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Applications Consumer Electronics

Price & Stock for BLF578

Part # Distributor Description Stock Price Buy
DISTI # 18T7202
Newark Ldmos,rf,1000W,hf-500Mhz,50V, Drain Source Voltage Vds:110V, Continuous Drain Current Id:88A, Power Dissipation:-, Operating Frequency Min:-, Operating Frequency Max:225Mhz, No. Of Pins:4Pins, Operating Temperature Max:225°C, Msl:- Rohs Compliant: Yes |Nxp BLF578 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 0
Buy Now
DISTI # 1851687
Farnell LDMOS,RF,1000W,HF-500MHZ,50V RoHS: Compliant Min Qty: 1 Lead time: 52 Weeks, 1 Days Container: Each 0
  • 1 $295.9905
  • 25 $288.3603
  • 100 $280.7426
  • 250 $270.9520
  • 500 $262.3853
$262.3853 / $295.9905 Buy Now

Part Details for BLF578

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BLF578 Part Data Attributes

BLF578 NXP Semiconductors
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BLF578 NXP Semiconductors TRANSISTOR 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-4, FET RF Power
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer NXP SEMICONDUCTORS
Package Description ROHS COMPLIANT, CERAMIC PACKAGE-4
Pin Count 4
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer NXP
Case Connection SOURCE
Configuration COMMON SOURCE, 2 ELEMENTS
DS Breakdown Voltage-Min 110 V
Drain Current-Max (ID) 112 A
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band ULTRA HIGH FREQUENCY BAND
JESD-30 Code R-CDFM-F4
Number of Elements 2
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 225 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON

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