Datasheets
BFG520WT/R by:

TRANSISTOR L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal

Part Details for BFG520WT/R by NXP Semiconductors

Overview of BFG520WT/R by NXP Semiconductors

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Part Details for BFG520WT/R

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BFG520WT/R Part Data Attributes:

BFG520WT/R NXP Semiconductors
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BFG520WT/R NXP Semiconductors TRANSISTOR L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature LOW NOISE, HIGH RELIABILITY
Case Connection COLLECTOR
Collector Current-Max (IC) 0.07 A
Configuration SINGLE
DC Current Gain-Min (hFE) 60
Highest Frequency Band L BAND
JESD-30 Code R-PDSO-G4
JESD-609 Code e3
Number of Elements 1
Number of Terminals 4
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 0.5 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 9000 MHz

Alternate Parts for BFG520WT/R

This table gives cross-reference parts and alternative options found for BFG520WT/R. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BFG520WT/R, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BFG520W,115 BFG520W - NPN 9 GHz wideband transistor SOP 4-Pin NXP Semiconductors BFG520WT/R vs BFG520W,115
BFG520W L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR NXP Semiconductors BFG520WT/R vs BFG520W
Part Number Description Manufacturer Compare
BFR193E6327 RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, Infineon Technologies AG BFG520WT/R vs BFR193E6327
BFG520W,115 BFG520W - NPN 9 GHz wideband transistor SOP 4-Pin NXP Semiconductors BFG520WT/R vs BFG520W,115
BFR193E6327 RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN Siemens BFG520WT/R vs BFR193E6327
BF771E6327 RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, Silicon, NPN, Infineon Technologies AG BFG520WT/R vs BF771E6327
BF771E6327HTSA1 RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, Silicon, NPN, Infineon Technologies AG BFG520WT/R vs BF771E6327HTSA1
BF771 RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, L Band, Silicon, NPN, TO-236, ROHS COMPLIANT PACKAGE-3 Infineon Technologies AG BFG520WT/R vs BF771
BFG520W L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR NXP Semiconductors BFG520WT/R vs BFG520W

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