Datasheets
BFG193 by:

RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, L Band, Silicon, NPN

Part Details for BFG193 by Siemens

Overview of BFG193 by Siemens

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Applications Environmental Monitoring Space Technology Telecommunications

Price & Stock for BFG193

Part # Distributor Description Stock Price Buy
Bristol Electronics   1713
RFQ

Part Details for BFG193

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BFG193 Part Data Attributes:

BFG193 Siemens
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BFG193 Siemens RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, L Band, Silicon, NPN
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer SIEMENS A G
Reach Compliance Code unknown
ECCN Code EAR99
Case Connection COLLECTOR
Collector Current-Max (IC) 0.08 A
Collector-Base Capacitance-Max 0.9 pF
Collector-Emitter Voltage-Max 12 V
Configuration SINGLE
Highest Frequency Band L BAND
JESD-30 Code R-PDSO-G4
JESD-609 Code e0
Number of Elements 1
Number of Terminals 4
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 0.5 W
Power Gain-Min (Gp) 16 dB
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application AMPLIFIER
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 8000 MHz

Alternate Parts for BFG193

This table gives cross-reference parts and alternative options found for BFG193. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BFG193, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BFG193 RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, L Band, Silicon, NPN, ROHS COMPLIANT PACKAGE-4 Infineon Technologies AG BFG193 vs BFG193
Part Number Description Manufacturer Compare
BFP183 RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, L Band, Silicon, NPN, PACKAGE-4 Infineon Technologies AG BFG193 vs BFP183
MMBTH10-4LT1G NPN Bipolar Transistor hFE 120 to 240; fT ≥ 800 MHz, SOT-23 (TO-236) 3 LEAD, 3000-REEL onsemi BFG193 vs MMBTH10-4LT1G
BF240ZL1 Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92 Motorola Mobility LLC BFG193 vs BF240ZL1
2SC3268 TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, 2-5K1A, 3 PIN, BIP RF Small Signal Toshiba America Electronic Components BFG193 vs 2SC3268
2SC3793 RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, MPAK-3 Hitachi Ltd BFG193 vs 2SC3793
MMBTH10LT1 UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236AB Motorola Mobility LLC BFG193 vs MMBTH10LT1
2SC5437 L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, ULTRA SUPER MINIMOLD PACKAGE-3 Renesas Electronics Corporation BFG193 vs 2SC5437
BFR183 RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, L Band, Silicon, NPN, ROHS COMPLIANT PACKAGE-3 Infineon Technologies AG BFG193 vs BFR183
2N6679 S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR Motorola Mobility LLC BFG193 vs 2N6679
BFR193W RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN Siemens BFG193 vs BFR193W

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