Datasheets
BF771W by:

RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, L Band, Silicon, NPN

Part Details for BF771W by Siemens

Overview of BF771W by Siemens

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Applications Telecommunications

Part Details for BF771W

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BF771W Part Data Attributes:

BF771W Siemens
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BF771W Siemens RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, L Band, Silicon, NPN
Part Life Cycle Code Transferred
Ihs Manufacturer SIEMENS A G
Package Description SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.21.00.75
Collector Current-Max (IC) 0.08 A
Collector-Base Capacitance-Max 0.1 pF
Collector-Emitter Voltage-Max 12 V
Configuration SINGLE
DC Current Gain-Min (hFE) 50
Highest Frequency Band L BAND
JESD-30 Code R-PDSO-G3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type NPN
Power Dissipation Ambient-Max 0.58 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application AMPLIFIER
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 8000 MHz

Alternate Parts for BF771W

This table gives cross-reference parts and alternative options found for BF771W. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BF771W, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BF771W RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, L Band, Silicon, NPN, Infineon Technologies AG BF771W vs BF771W
Part Number Description Manufacturer Compare
2SC4592 UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MPAK-4 Renesas Electronics Corporation BF771W vs 2SC4592
NE73416 RF Small Signal Bipolar Transistor, 0.05A I(C), L Band, Silicon, NPN, HERMETIC SEALED, METAL CAN-3 NEC Electronics America Inc BF771W vs NE73416
2SC3603 RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, S Band, Silicon, NPN NEC Electronics Group BF771W vs 2SC3603
2SC3510UR RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, MPAK-3 Hitachi Ltd BF771W vs 2SC3510UR
2SC3663 RF Small Signal Bipolar Transistor, 0.005A I(C), 1-Element, Silicon, NPN, MINIMOLD PACKAGE-3 NEC Electronics America Inc BF771W vs 2SC3663
BFP180W RF Small Signal Bipolar Transistor, 0.004A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, SOT-343, 4 PIN Siemens BF771W vs BFP180W
2SC3011 TRANSISTOR C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal Toshiba America Electronic Components BF771W vs 2SC3011
2SC4791 RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, MPAK-4 Hitachi Ltd BF771W vs 2SC4791
2SC4593 RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, CMPAK-3 Hitachi Ltd BF771W vs 2SC4593
NE73400 RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN California Eastern Laboratories (CEL) BF771W vs NE73400

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