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Transistors / Power Field-Effect Transistors / BF1101
Datasheets
BF1101 by:

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

Part Details for BF1101 by Philips Semiconductors

Overview of BF1101 by Philips Semiconductors

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Applications Space Technology Aerospace and Defense Telecommunications

Part Details for BF1101

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BF1101 Part Data Attributes

Parametric Data
BF1101 Philips Semiconductors
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BF1101 Philips Semiconductors Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer PHILIPS SEMICONDUCTORS
Reach Compliance Code unknown
ECCN Code EAR99
Configuration SINGLE
Drain Current-Max (ID) 0.03 A
FET Technology METAL-OXIDE SEMICONDUCTOR
Number of Elements 1
Operating Temperature-Max 150 °C
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Surface Mount YES

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