| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
|
DISTI #
72AK9233
|
Newark | Darlington Transistor, To-225Aa |Onsemi BD676G RoHS: Not Compliant Min Qty: 940 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$0.3520 / $0.5140 | Buy Now | |
|
DISTI #
98H0510
|
Newark | Darlington Transistor, Pnp, -45V, To-225, Transistor Polarity:Pnp, No. Of Pins:3Pins, Transistor Mounting:Through Hole, Operating Temperature Max:150°C, Product Range:-, Qualification:-, Collector Emitter Voltage Max:45V Rohs Compliant: Yes |Onsemi BD676G RoHS: Compliant Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
Buy Now | ||
|
DISTI #
BD676G
|
Avnet Americas | Trans Darlington PNP 45V 4A 3-Pin(3+Tab) TO-225 Bulk - Bulk (Alt: BD676G) RoHS: Compliant Min Qty: 932 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Bulk | 6923 Partner Stock |
|
RFQ | ||
| Rochester Electronics | Power Bipolar Transistor, 4A, 45V, PNP, TO-225AA, Plastic/Epoxy, 3 Pin RoHS: Compliant Status: Obsolete Min Qty: 1 | 6923 |
|
$0.3327 / $0.3914 | Buy Now |
|
|
|
|---|---|
|
Pbfree Code
|
Yes
|
|
Part Life Cycle Code
|
End Of Life
|
|
Ihs Manufacturer
|
ONSEMI
|
|
Part Package Code
|
TO-225
|
|
Package Description
|
ROHS COMPLIANT, PLASTIC, CASE 77-09, 3 PIN
|
|
Pin Count
|
3
|
|
Manufacturer Package Code
|
77-09
|
|
Reach Compliance Code
|
compliant
|
|
ECCN Code
|
EAR99
|
|
Factory Lead Time
|
4 Weeks
|
|
Samacsys Manufacturer
|
onsemi
|
|
Collector Current-Max (IC)
|
4 A
|
|
Collector-Emitter Voltage-Max
|
45 V
|
|
Configuration
|
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
|
|
DC Current Gain-Min (hFE)
|
750
|
|
JEDEC-95 Code
|
TO-225AA
|
|
JESD-30 Code
|
R-PSFM-T3
|
|
JESD-609 Code
|
e3
|
|
Number of Elements
|
1
|
|
Number of Terminals
|
3
|
|
Operating Temperature-Max
|
150 °C
|
|
Package Body Material
|
PLASTIC/EPOXY
|
|
Package Shape
|
RECTANGULAR
|
|
Package Style
|
FLANGE MOUNT
|
|
Polarity/Channel Type
|
PNP
|
|
Power Dissipation-Max (Abs)
|
40 W
|
|
Qualification Status
|
Not Qualified
|
|
Surface Mount
|
NO
|
|
Terminal Finish
|
MATTE TIN
|
|
Terminal Form
|
THROUGH-HOLE
|
|
Terminal Position
|
SINGLE
|
|
Transistor Application
|
AMPLIFIER
|
|
Transistor Element Material
|
SILICON
|
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| JAN2N5666S | Power Bipolar Transistor, 5A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 3 Pin, HERMETIC SEALED, METAL CAN-3 | Semicoa Semiconductors | BD676G vs JAN2N5666S |
| TIP112 | Low voltage NPN power Darlington transistor | STMicroelectronics | BD676G vs TIP112 |
| JANTXV2N5666S | Power Bipolar Transistor, 5A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 3 Pin, HERMETIC SEALED, METAL CAN-3 | Semicoa Semiconductors | BD676G vs JANTXV2N5666S |
| TIP32CG | PNP Bipolar Power Transistor, TO-220 3 LEAD STANDARD, 50-TUBE | onsemi | BD676G vs TIP32CG |
| TIP115 | Low voltage PNP power Darlington transistor | STMicroelectronics | BD676G vs TIP115 |
| BD242BG | 3.0 A, 80 V PNP Bipolar Power Transistor, TO-220 3 LEAD STANDARD, 50-TUBE | onsemi | BD676G vs BD242BG |
| TIP116G | Medium Power NPN Darlington Bipolar Power Transistor PNP , 2.0 A, 80 V, TO-220 3 LEAD STANDARD, 50-TUBE | onsemi | BD676G vs TIP116G |
| 2N5666S | Power Bipolar Transistor, 5A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, Metal, 3 Pin | Microchip Technology Inc | BD676G vs 2N5666S |
| JANS2N5666S | Power Bipolar Transistor, 5A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, Metal, 2 Pin | Microchip Technology Inc | BD676G vs JANS2N5666S |
| JANTX2N5666 | Power Bipolar Transistor, 5A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, Metal, 3 Pin | Microchip Technology Inc | BD676G vs JANTX2N5666 |
