BD676G
vs
2N5666S
feature comparison
| Pbfree Code |
Yes
|
|
| Part Life Cycle Code |
End Of Life
|
Active
|
| Ihs Manufacturer |
ONSEMI
|
MICROCHIP TECHNOLOGY INC
|
| Part Package Code |
TO-225
|
|
| Package Description |
ROHS COMPLIANT, PLASTIC, CASE 77-09, 3 PIN
|
HERMETIC SEALED, METAL CAN-3
|
| Pin Count |
3
|
|
| Manufacturer Package Code |
77-09
|
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Factory Lead Time |
4 Weeks
|
22 Weeks
|
| Samacsys Manufacturer |
onsemi
|
|
| Collector Current-Max (IC) |
4 A
|
5 A
|
| Collector-Emitter Voltage-Max |
45 V
|
200 V
|
| Configuration |
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
|
SINGLE
|
| DC Current Gain-Min (hFE) |
750
|
15
|
| JEDEC-95 Code |
TO-225AA
|
TO-205AD
|
| JESD-30 Code |
R-PSFM-T3
|
O-MBCY-W3
|
| JESD-609 Code |
e3
|
e0
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Temperature-Max |
150 °C
|
200 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
METAL
|
| Package Shape |
RECTANGULAR
|
ROUND
|
| Package Style |
FLANGE MOUNT
|
CYLINDRICAL
|
| Polarity/Channel Type |
PNP
|
NPN
|
| Power Dissipation-Max (Abs) |
40 W
|
2.5 W
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
MATTE TIN
|
TIN LEAD
|
| Terminal Form |
THROUGH-HOLE
|
WIRE
|
| Terminal Position |
SINGLE
|
BOTTOM
|
| Transistor Application |
AMPLIFIER
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
1
|
5
|
| Rohs Code |
|
No
|
| Collector-Base Capacitance-Max |
|
120 pF
|
| Operating Temperature-Min |
|
-65 °C
|
| Power Dissipation Ambient-Max |
|
2.5 W
|
| Turn-off Time-Max (toff) |
|
1500 ns
|
| Turn-on Time-Max (ton) |
|
250 ns
|
| VCEsat-Max |
|
0.4 V
|
|
|
|
Compare BD676G with alternatives
Compare 2N5666S with alternatives