Part Details for BC327 by National Semiconductor Corporation
Overview of BC327 by National Semiconductor Corporation
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for BC327
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
|
Bristol Electronics | Min Qty: 27 | 890 |
|
$0.0562 / $0.1875 | Buy Now |
|
|
Quest Components | 1000 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 | 712 |
|
$0.0500 / $0.2500 | Buy Now |
Part Details for BC327
BC327 CAD Models
BC327 Part Data Attributes:
|
|
BC327
National Semiconductor Corporation
Buy Now
Datasheet
|
Compare Parts:
BC327
National Semiconductor Corporation
Small Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
|
| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | NATIONAL SEMICONDUCTOR CORP | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | HIGH CURRENT DRIVER | |
| Collector Current-Max (IC) | 1 A | |
| Collector-Emitter Voltage-Max | 45 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 40 | |
| JEDEC-95 Code | TO-92 | |
| JESD-30 Code | O-PBCY-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| Polarity/Channel Type | PNP | |
| Power Dissipation-Max (Abs) | 0.625 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | BOTTOM | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 60 MHz | |
| VCEsat-Max | 0.7 V |