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Transistors / Power Field-Effect Transistors / AUIRFR5305TR
Datasheets
AUIRFR5305TR by:

Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3

Part Details for AUIRFR5305TR by Infineon Technologies AG

Overview of AUIRFR5305TR by Infineon Technologies AG

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Price & Stock for AUIRFR5305TR

Part # Distributor Description Stock Price Buy
DISTI # 83AK6798
Newark Mosfet, N-Ch, 55V, 31A, To-252 Rohs Compliant: Yes |Infineon AUIRFR5305TR Min Qty: 2000 Package Multiple: 1 Date Code: 1 Container: Reel 0
Buy Now
DISTI # 68AH8868
Newark Mosfet, N-Ch, 55V, 31A, To-252 Rohs Compliant: Yes |Infineon AUIRFR5305TR Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
Buy Now
DISTI # 448-AUIRFR5305CT-ND
DigiKey MOSFET P-CH 55V 31A DPAK Min Qty: 1 Lead time: 52 Weeks Container: Cut Tape (CT), Tape & Reel (TR) 1683
In Stock
  • 1 $2.8700
  • 10 $2.3870
  • 100 $1.8998
  • 500 $1.6075
  • 1,000 $1.3639
$1.3639 / $2.8700 Buy Now
DISTI # 71241581
Verical Trans MOSFET P-CH Si 55V 31A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R Min Qty: 8 Package Multiple: 1 Date Code: 2336 Americas - 2000
  • 8 $4.0125
  • 13 $2.5625
  • 50 $2.0750
  • 100 $1.9375
  • 200 $1.9250
  • 500 $1.7125
  • 1,000 $1.6000
  • 2,000 $1.5625
$1.5625 / $4.0125 Buy Now
Rochester Electronics MOSFET_)40V,60V) ' RoHS: Compliant Status: Obsolete Min Qty: 1 2000
  • 1 $1.4100
  • 25 $1.3800
  • 100 $1.3200
  • 500 $1.2700
  • 1,000 $1.2000
$1.2000 / $1.4100 Buy Now
Ameya Holding Limited   Min Qty: 2000 1834
  • 2,000 $1.7567
  • 4,000 $1.7145
  • 6,000 $1.6734
$1.6734 / $1.7567 Buy Now
DISTI # C1S327401042245
Chip1Stop Trans MOSFET P-CH Si 55V 31A Automotive 3-Pin(2+Tab) DPAK T/R RoHS: Compliant pbFree: No Container: Cut Tape 2000
  • 1 $3.2100
  • 10 $2.0500
  • 50 $1.6600
  • 100 $1.5500
  • 200 $1.5400
  • 500 $1.3700
  • 1,000 $1.2800
  • 2,000 $1.2500
$1.2500 / $3.2100 Buy Now
DISTI # 3407314
element14 Asia-Pacific MOSFET, N-CH, 55V, 31A, TO-252 RoHS: Compliant Min Qty: 1 Container: Cut Tape 12018
  • 1 $1.2363
$1.2363 Buy Now
DISTI # 3407314RL
element14 Asia-Pacific MOSFET, N-CH, 55V, 31A, TO-252 RoHS: Compliant Min Qty: 1 Container: Reel 12018
  • 1 $1.2363
$1.2363 Buy Now
DISTI # 4293641
element14 Asia-Pacific MOSFET, N-CH, 55V, 31A, TO-252 RoHS: Compliant Min Qty: 2000 Container: Reel 10000
  • 2,000 $2.5021
  • 6,000 $2.0654
$2.0654 / $2.5021 Buy Now
DISTI # 4293641
Farnell MOSFET, N-CH, 55V, 31A, TO-252 RoHS: Compliant Min Qty: 2000 Lead time: 27 Weeks, 1 Days Container: Reel 10000
  • 2,000 $1.2671
  • 6,000 $1.2421
$1.2421 / $1.2671 Buy Now
DISTI # 3407314RL
Farnell MOSFET, N-CH, 55V, 31A, TO-252 RoHS: Compliant Min Qty: 100 Lead time: 51 Weeks, 1 Days Container: Reel 10139
  • 100 $1.8568
  • 500 $1.5683
  • 1,000 $1.3299
$1.3299 / $1.8568 Buy Now
DISTI # 3407314
Farnell MOSFET, N-CH, 55V, 31A, TO-252 RoHS: Compliant Min Qty: 5 Lead time: 51 Weeks, 1 Days Container: Cut Tape 10139
  • 5 $2.3336
  • 50 $2.0952
  • 100 $1.8568
  • 500 $1.5683
  • 1,000 $1.3299
$1.3299 / $2.3336 Buy Now

Part Details for AUIRFR5305TR

AUIRFR5305TR CAD Models

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AUIRFR5305TR Part Data Attributes:

Parametric Data
AUIRFR5305TR Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
AUIRFR5305TR Infineon Technologies AG Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 52 Weeks
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Avalanche Energy Rating (Eas) 280 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 31 A
Drain-source On Resistance-Max 0.065 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 110 W
Pulsed Drain Current-Max (IDM) 110 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for AUIRFR5305TR

This table gives cross-reference parts and alternative options found for AUIRFR5305TR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AUIRFR5305TR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFR5305TRPBF Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 Infineon Technologies AG AUIRFR5305TR vs IRFR5305TRPBF
IRFR5305TRRPBF Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 Infineon Technologies AG AUIRFR5305TR vs IRFR5305TRRPBF
IRFR5305TRPBF Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 International Rectifier AUIRFR5305TR vs IRFR5305TRPBF
IRFR5305TR Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 International Rectifier AUIRFR5305TR vs IRFR5305TR
IRFR5305 Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 International Rectifier AUIRFR5305TR vs IRFR5305
IRFR5305TRRPBF Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 International Rectifier AUIRFR5305TR vs IRFR5305TRRPBF
AUIRFR5305 Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3/2 Infineon Technologies AG AUIRFR5305TR vs AUIRFR5305
AUIRFR5305TRL Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3/2 Infineon Technologies AG AUIRFR5305TR vs AUIRFR5305TRL
IRFR5305PBF Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 Infineon Technologies AG AUIRFR5305TR vs IRFR5305PBF
IRFR5305HR Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3/2 Infineon Technologies AG AUIRFR5305TR vs IRFR5305HR
Part Number Description Manufacturer Compare
FQB27P06TM Power MOSFET, P-Channel, QFET®, -60 V, -27 A, 70 mΩ, D2PAK, 800-REEL onsemi AUIRFR5305TR vs FQB27P06TM
IRFR5305TRRPBF Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 Infineon Technologies AG AUIRFR5305TR vs IRFR5305TRRPBF
2SJ402(TO-220FL) TRANSISTOR 30 A, 60 V, 0.06 ohm, P-CHANNEL, Si, POWER, MOSFET, 2-10S1B, TO-220FL, 3 PIN, FET General Purpose Power Toshiba America Electronic Components AUIRFR5305TR vs 2SJ402(TO-220FL)
IRFR5305PBF Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 International Rectifier AUIRFR5305TR vs IRFR5305PBF
AUIRFR5305 Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3/2 Infineon Technologies AG AUIRFR5305TR vs AUIRFR5305
IRFR5305TR Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 International Rectifier AUIRFR5305TR vs IRFR5305TR
IRFR5305 Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 Infineon Technologies AG AUIRFR5305TR vs IRFR5305
IRFR5305HR Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3/2 Infineon Technologies AG AUIRFR5305TR vs IRFR5305HR
AUIRFR5305TRL Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3/2 Infineon Technologies AG AUIRFR5305TR vs AUIRFR5305TRL
SP001567854 Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3/2 Infineon Technologies AG AUIRFR5305TR vs SP001567854

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