-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Part Details for AFT05MS003NT1 by NXP Semiconductors
Overview of AFT05MS003NT1 by NXP Semiconductors
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Price & Stock for AFT05MS003NT1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
31AC6113
|
Newark | Rf Ldmos, N-Ch, 30V, Sot-89, Drain Source Voltage Vds:30V, Continuous Drain Current Id:-, Power Dissipation:30.5W, Operating Frequency Min:1.8Mhz, Operating Frequency Max:941Mhz, No. Of Pins:3Pins, Operating Temperature Max:150°C Rohs Compliant: Yes |Nxp AFT05MS003NT1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
|
Buy Now | |
|
|
Rochester Electronics | AFT05MS003N - Airfast Wideband RF Power LDMOS Transistor RoHS: Compliant Status: Obsolete Min Qty: 1 | 11937 |
|
$1.6100 / $1.9000 | Buy Now |
|
DISTI #
2776248
|
element14 Asia-Pacific | RoHS: Compliant Min Qty: 1 Container: Cut Tape | 0 |
|
$2.6146 | Buy Now |
|
DISTI #
2776248RL
|
element14 Asia-Pacific | RoHS: Compliant Min Qty: 1 Container: Reel | 0 |
|
$2.6146 | Buy Now |
|
DISTI #
2776248RL
|
Farnell | RoHS: Compliant Min Qty: 10 Container: Reel | 11793 |
|
$2.3301 | Buy Now |
|
DISTI #
2776248
|
Farnell | RoHS: Compliant Min Qty: 1 Container: Cut Tape | 11793 |
|
$2.3301 / $2.7332 | Buy Now |
Part Details for AFT05MS003NT1
AFT05MS003NT1 CAD Models
AFT05MS003NT1 Part Data Attributes:
|
|
AFT05MS003NT1
NXP Semiconductors
Buy Now
Datasheet
|
Compare Parts:
AFT05MS003NT1
NXP Semiconductors
RF POWER, FET
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Package Description | SOT-89A, 3 PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | NXP | |
| Case Connection | SOURCE | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 30 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 1.1 pF | |
| Highest Frequency Band | ULTRA HIGH FREQUENCY BAND | |
| JESD-30 Code | R-PSSO-F3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -40 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | FLAT | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON |
Alternate Parts for AFT05MS003NT1
This table gives cross-reference parts and alternative options found for AFT05MS003NT1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AFT05MS003NT1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| RD02MUS1-101,T112 | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-10 | Mitsubishi Electric | AFT05MS003NT1 vs RD02MUS1-101,T112 |
| RD02MUS1 | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-10 | Mitsubishi Electric | AFT05MS003NT1 vs RD02MUS1 |
| RD02MUS1B | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-10 | Mitsubishi Electric | AFT05MS003NT1 vs RD02MUS1B |
| RD02MUS2 | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, 3 PIN | Mitsubishi Electric | AFT05MS003NT1 vs RD02MUS2 |