Part Details for A3G35H100-04SR3 by NXP Semiconductors
Overview of A3G35H100-04SR3 by NXP Semiconductors
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Security and Surveillance
Environmental Monitoring
Internet of Things (IoT)
Space Technology
Smart Cities
Aerospace and Defense
Healthcare
Agriculture Technology
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Medical Imaging
Robotics and Drones
Price & Stock for A3G35H100-04SR3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
58AC6127
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Newark | Airfast Rf Power Gan Transistor, 3400-3600 Mhz, 14 W Avg., 48 V/ Reel Rohs Compliant: Yes |Nxp A3G35H100-04SR3 Min Qty: 250 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$82.6100 | Buy Now |
|
DISTI #
2156-A3G35H100-04SR3-ND
|
DigiKey | RF MOSFET GAN 48V NI780 Min Qty: 3 Container: Bulk MARKETPLACE PRODUCT |
1387 In Stock |
|
$102.5400 | Buy Now |
|
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Rochester Electronics | A3G35H100-04 - Airfast RF Power GaN Transistor, 3400-3600 MHz, 14 W Avg., 48 V RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 | 1387 |
|
$88.0000 / $103.5300 | Buy Now |
Part Details for A3G35H100-04SR3
A3G35H100-04SR3 CAD Models
A3G35H100-04SR3 Part Data Attributes:
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A3G35H100-04SR3
NXP Semiconductors
Buy Now
Datasheet
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Compare Parts:
A3G35H100-04SR3
NXP Semiconductors
RF Power Field-Effect Transistor
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00 | |
| Samacsys Manufacturer | NXP | |
| Configuration | SEPARATE, 2 ELEMENTS | |
| DS Breakdown Voltage-Min | 150 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Highest Frequency Band | S BAND | |
| JESD-30 Code | R-CDFP-F4 | |
| Number of Elements | 2 | |
| Number of Terminals | 4 | |
| Operating Mode | DEPLETION MODE | |
| Operating Temperature-Max | 225 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLATPACK | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Gain-Min (Gp) | 13 dB | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | GALLIUM NITRIDE |