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Transistors RF Power Field-Effect Transistors A2T07D160W04SR3

A2T07D160W04SR3
Description: RF POWER, FET

Overview of A2T07D160W04SR3 by NXP Semiconductors

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Price & Stock for A2T07D160W04SR3 by NXP Semiconductors

Part # Manufacturer Description Stock Price Buy
DISTI # 30Y6190
Newark Airfast Rf Power Ldmos Transistor, 710-960 Mhz, 160 W Avg., 28 V/ Reel Rohs Compliant: Yes |Nxp A2T07D160W04SR3 RoHS: Compliant Min Qty: 250 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 100 $67.6200
$67.6200 Buy Now
DISTI # A2T07D160W04SR3-ND
DigiKey RF MOSFET LDMOS 28V NI780 Min Qty: 250 Lead time: 10 Weeks Container: Tape & Reel (TR) Limited Supply - Call
  • 250 $69.3553
$69.3553 Buy Now
DISTI # A2T07D160W04SR3
Avnet Americas Transistor RF FET N-CH 70V 716MHz to 960MHz 4-Pin NI-780HS T/R - Tape and Reel (Alt: A2T07D160W04SR3) RoHS: Compliant Min Qty: 5 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Reel 1350 Partner Stock
RFQ
DISTI # A2T07D160W04SR3
Avnet Americas Transistor RF FET N-CH 70V 716MHz to 960MHz 4-Pin NI-780HS T/R - Tape and Reel (Alt: A2T07D160W04SR3) RoHS: Compliant Min Qty: 250 Package Multiple: 250 Lead time: 10 Weeks, 0 Days Container: Reel 0
RFQ
DISTI # 841-A2T07D160W04SR3
Mouser Electronics RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 710-960 MHz, 160 W Avg., 28 V RoHS: Compliant 0
  • 250 $69.3500
$69.3500 Order Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 250 Package Multiple: 250 Container: Reel 0
Reel
  • 250 $64.4200
$64.4200 Buy Now
Rochester Electronics RF Power LDMOS Transistor RoHS: Compliant Status: Not Recommended for New Designs Min Qty: 1 1350
  • 1 $77.0300
  • 25 $75.4900
  • 100 $72.4100
  • 500 $69.3300
  • 1,000 $65.4800
$65.4800 / $77.0300 Buy Now
DISTI # A2T07D160W04SR3
Richardson RFPD RF POWER TRANSISTOR RoHS: Compliant Min Qty: 1 0
  • 1 $80.4200
  • 10 $76.9700
  • 25 $74.8300
  • 50 $72.6100
$72.6100 / $80.4200 Buy Now
DISTI # A2T07D160W04SR3
Avnet Silica Transistor RF FET N-CH 70V 716MHz to 960MHz 4-Pin NI-780HS T/R (Alt: A2T07D160W04SR3) RoHS: Compliant Min Qty: 250 Package Multiple: 250 Lead time: 12 Weeks, 0 Days Silica - 0
Buy Now
DISTI # A2T07D160W04SR3
EBV Elektronik Transistor RF FET N-CH 70V 716MHz to 960MHz 4-Pin NI-780HS T/R (Alt: A2T07D160W04SR3) RoHS: Compliant Min Qty: 250 Package Multiple: 250 Lead time: 12 Weeks, 0 Days EBV - 0
Buy Now

CAD Models for A2T07D160W04SR3 by NXP Semiconductors
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Part Data Attributes for A2T07D160W04SR3 by NXP Semiconductors
Parametric Data

A2T07D160W04SR3
NXP Semiconductors
Buy Now
-
-
Rohs Code
Yes
Part Life Cycle Code
Not Recommended
Ihs Manufacturer
NXP SEMICONDUCTORS
Reach Compliance Code
compliant
ECCN Code
EAR99
HTS Code
8541.29.00
Factory Lead Time
4 Weeks
Samacsys Manufacturer
NXP
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
40
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Alternate Parts for A2T07D160W04SR3

This table gives cross-reference parts and alternative options found for A2T07D160W04SR3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of A2T07D160W04SR3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
MRFE6S9125NR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-270, ROHS COMPLIANT, PLASTIC, WB-4, CASE-1486-03, 4 PIN Freescale Semiconductor A2T07D160W04SR3 vs MRFE6S9125NR1
MRF8S9202NR3 Single W-CDMA Lateral N-Channel RF Power MOSFET, 920-960 MHz, 58 W Avg., 28 V Freescale Semiconductor A2T07D160W04SR3 vs MRF8S9202NR3
MRF8S9220HSR3 Single W-CDMA Lateral N-Channel RF Power MOSFET, 920-960 MHz, 65 W Avg., 28 V Freescale Semiconductor A2T07D160W04SR3 vs MRF8S9220HSR3
MRF8S9260HSR3 Single W-CDMA Lateral N-Channel RF Power MOSFET, 920-960 MHz, 75 W Avg., 28 V Freescale Semiconductor A2T07D160W04SR3 vs MRF8S9260HSR3
MRF8S9100HR3 GSM, GSM EDGE Lateral N-Channel RF Power MOSFET, 920-960 MHz, 72 W CW, 28 V Freescale Semiconductor A2T07D160W04SR3 vs MRF8S9100HR3
MRFE6S9160HSR3 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, NI-780S, CASE 465A-06, 2 PIN Freescale Semiconductor A2T07D160W04SR3 vs MRFE6S9160HSR3
MRF8S9100HSR3 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, NI-780S, CASE 465A-06, 2 PIN Freescale Semiconductor A2T07D160W04SR3 vs MRF8S9100HSR3
MRF8S9170NR3 Single W-CDMA Lateral N-Channel RF Power MOSFET, 920-960 MHz, 50 W Avg., 28 V Freescale Semiconductor A2T07D160W04SR3 vs MRF8S9170NR3
MRFE6S9125NBR1 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, TO-272, ROHS COMPLIANT, PLASTIC, WB-4, CASE-1484-04, 4 PIN Freescale Semiconductor A2T07D160W04SR3 vs MRFE6S9125NBR1
MRF8S9200NR3 Single W-CDMA Lateral N-Channel RF Power MOSFET, 920-960 MHz, 58 W Avg., 28 V Freescale Semiconductor A2T07D160W04SR3 vs MRF8S9200NR3

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