Memory
W9825G2JB-75
Winbond Electronics Corp
Description: Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, TFBGA-90

Overview of W9825G2JB-75 by Winbond Electronics Corp

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Price & Stock for W9825G2JB-75 by Winbond Electronics Corp

Part # Manufacturer Description Stock Price Buy
NAC 256Mb SDR SDRAM x32, 133MHz,, TFBGA 90 Package RoHS: Compliant Package Multiple: 1 0
RFQ

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Part Data Attributes for W9825G2JB-75 by Winbond Electronics Corp

W9825G2JB-75
Winbond Electronics Corp
-
-
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
WINBOND ELECTRONICS CORP
Part Package Code
BGA
Package Description
TFBGA-90
Pin Count
90
Reach Compliance Code
compliant
ECCN Code
EAR99
HTS Code
8542.32.00.24
Samacsys Manufacturer
Winbond
Access Mode
FOUR BANK PAGE BURST
Access Time-Max
5.4 ns
Additional Feature
AUTO/SELF REFRESH
Clock Frequency-Max (fCLK)
133 MHz
I/O Type
COMMON
Interleaved Burst Length
1,2,4,8
JESD-30 Code
R-PBGA-B90
Length
13 mm
Memory Density
268435456 bit
Memory IC Type
SYNCHRONOUS DRAM
Memory Width
32
Number of Functions
1
Number of Ports
1
Number of Terminals
90
Number of Words
8388608 words
Number of Words Code
8000000
Operating Mode
SYNCHRONOUS
Operating Temperature-Max
70 °C
Operating Temperature-Min
Organization
8MX32
Package Body Material
PLASTIC/EPOXY
Package Code
TFBGA
Package Equivalence Code
BGA90,9X15,32
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Qualification Status
Not Qualified
Refresh Cycles
4096
Seated Height-Max
1.2 mm
Self Refresh
YES
Sequential Burst Length
1,2,4,8,FP
Standby Current-Max
0.004 A
Supply Current-Max
0.14 mA
Supply Voltage-Max (Vsup)
3.6 V
Supply Voltage-Min (Vsup)
2.7 V
Supply Voltage-Nom (Vsup)
3.3 V
Surface Mount
YES
Technology
CMOS
Temperature Grade
COMMERCIAL
Terminal Form
BALL
Terminal Pitch
0.8 mm
Terminal Position
BOTTOM
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Width
8 mm
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  1. W9825G2JB-75
    Winbond Electronics Corp
    Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, TFBGA-90
    VS

Alternate Parts for W9825G2JB-75

This table gives cross-reference parts and alternative options found for W9825G2JB-75. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of W9825G2JB-75, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
EDS2732AABH-60L-E Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, LEAD FREE, FBGA-90 Elpida Memory Inc W9825G2JB-75 vs EDS2732AABH-60L-E
W9825G2DB-75 Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, ROHS COMPLIANT, TFBGA-90 Winbond Electronics Corp W9825G2JB-75 vs W9825G2DB-75
IS42SM32800D-7BLI Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MINI, BGA-90 Integrated Silicon Solution Inc W9825G2JB-75 vs IS42SM32800D-7BLI
EDS2532AABB-7AL-E Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, FBGA-90 Elpida Memory Inc W9825G2JB-75 vs EDS2532AABB-7AL-E
IS42SM32800D-6BL Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, LEAD FREE, MINI, BGA-90 Integrated Silicon Solution Inc W9825G2JB-75 vs IS42SM32800D-6BL
IS42SM32800D-75BL Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, MO-207, FBGA-90 Integrated Silicon Solution Inc W9825G2JB-75 vs IS42SM32800D-75BL
H57V2622GMR-60L Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 1.10 MM HEIGHT, 0.80 MM, ROHS COMPLIANT, FBGA-90 SK Hynix Inc W9825G2JB-75 vs H57V2622GMR-60L
IS42SM32800D-75BLI Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, MO-207, FBGA-90 Integrated Silicon Solution Inc W9825G2JB-75 vs IS42SM32800D-75BLI
EDS2732AABB-7AL-E Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, FBGA-90 Elpida Memory Inc W9825G2JB-75 vs EDS2732AABB-7AL-E
W9825G2DB75I 2MX32 SYNCHRONOUS DRAM, 5.4ns, PBGA90, 8 X 13 MM, 0.80 MM PITCH, ROHS COMPLIANT, TFPGA-90 Winbond Electronics Corp W9825G2JB-75 vs W9825G2DB75I
Part Number Description Manufacturer Compare
K4X56323PI-8EC60 DDR DRAM, 8MX32, 5.5ns, CMOS, PBGA90, LEAD FREE, FBGA-90 Samsung Semiconductor W9825G2JB-75 vs K4X56323PI-8EC60
HY5V52EMP-6I Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-90 SK Hynix Inc W9825G2JB-75 vs HY5V52EMP-6I
K4M563233G-FN750 Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, FBGA-90 Samsung Semiconductor W9825G2JB-75 vs K4M563233G-FN750
K4M56323LD-MN1L Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90, FBGA-90 Samsung Semiconductor W9825G2JB-75 vs K4M56323LD-MN1L
HY57W2A3220LT-HC Synchronous DRAM, 4MX32, 5.4ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, TSOP2-86 SK Hynix Inc W9825G2JB-75 vs HY57W2A3220LT-HC
K4M56323LD-MS1H Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90, FBGA-90 Samsung Semiconductor W9825G2JB-75 vs K4M56323LD-MS1H
K4M56323LE-EL1H Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90, LEAD FREE, FBGA-90 Samsung Semiconductor W9825G2JB-75 vs K4M56323LE-EL1H
K4M56323LG-HF750 Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90, LEAD FREE, FBGA-90 Samsung Semiconductor W9825G2JB-75 vs K4M56323LG-HF750
K4M56323PG-FG900 Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90, FBGA-90 Samsung Semiconductor W9825G2JB-75 vs K4M56323PG-FG900
K4S28323LE-HN1H0 Synchronous DRAM, 4MX32, 7ns, CMOS, PBGA90, 9 X 13 MM, LEAD FREE, FBGA-90 Samsung Semiconductor W9825G2JB-75 vs K4S28323LE-HN1H0

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