W631GG8MB-12
Winbond Electronics Corp
Description: DDR DRAM,

Overview of W631GG8MB-12 by Winbond Electronics Corp

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Internet of Things (IoT) Environmental Monitoring Financial Technology (Fintech) Smart Cities Transportation and Logistics Agriculture Technology Telecommunications Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Automotive Education and Research Consumer Electronics Security and Surveillance Audio and Video Systems Computing and Data Storage Healthcare Entertainment and Gaming

Price & Stock for W631GG8MB-12 by Winbond Electronics Corp

Part # Manufacturer Description Stock Price Buy
DISTI # 454-W631GG8MB-12
Mouser Electronics DRAM 1Gb DDR3 SDRAM, x8, 800MHz, RoHS: Compliant 0
Order Now
NAC 1Gb DDR3 SDRAM, x8, 800MHz,, WBGA78 Package RoHS: Compliant Package Multiple: 1 0
RFQ

CAD Models for W631GG8MB-12 by Winbond Electronics Corp
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Part Data Attributes for W631GG8MB-12 by Winbond Electronics Corp

W631GG8MB-12
Winbond Electronics Corp
-
-
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
WINBOND ELECTRONICS CORP
Package Description
VFBGA-78
Reach Compliance Code
compliant
ECCN Code
EAR99
HTS Code
8542.32.00.32
Date Of Intro
2017-12-01
Access Mode
MULTI BANK PAGE BURST
Additional Feature
AUTO/SELF REFRESH
JESD-30 Code
R-PBGA-B78
Length
10.5 mm
Memory Density
1073741824 bit
Memory IC Type
DDR DRAM
Memory Width
8
Number of Functions
1
Number of Ports
1
Number of Terminals
78
Number of Words
134217728 words
Number of Words Code
128000000
Operating Mode
SYNCHRONOUS
Operating Temperature-Max
95 °C
Operating Temperature-Min
Organization
128MX8
Package Body Material
PLASTIC/EPOXY
Package Code
VFBGA
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Seated Height-Max
1 mm
Self Refresh
YES
Supply Voltage-Max (Vsup)
1.575 V
Supply Voltage-Min (Vsup)
1.425 V
Supply Voltage-Nom (Vsup)
1.5 V
Surface Mount
YES
Technology
CMOS
Temperature Grade
OTHER
Terminal Form
BALL
Terminal Pitch
0.8 mm
Terminal Position
BOTTOM
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Width
8 mm
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Alternate Parts for W631GG8MB-12

This table gives cross-reference parts and alternative options found for W631GG8MB-12. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of W631GG8MB-12, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
K4B1G0846F-HCK00 DDR DRAM, 128MX8, 0.255ns, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78 Samsung Semiconductor W631GG8MB-12 vs K4B1G0846F-HCK00
K4B1G0846F-HCK0 DDR DRAM, 128MX8, 0.225ns, CMOS, PBGA78, Samsung Semiconductor W631GG8MB-12 vs K4B1G0846F-HCK0
W631GG8MB12J DDR DRAM, Winbond Electronics Corp W631GG8MB-12 vs W631GG8MB12J
W631GG8KB12A DDR DRAM, 128MX8, 20ns, CMOS, PBGA78, 8 X 10.50 MM, 0.80 MM PITCH, ROHS COMPLIANT, WBGA-78 Winbond Electronics Corp W631GG8MB-12 vs W631GG8KB12A
Part Number Description Manufacturer Compare
W631GG8KB12I DDR DRAM, 128MX8, 20ns, CMOS, PBGA78, WBGA-78 Winbond Electronics Corp W631GG8MB-12 vs W631GG8KB12I
EDJ1108BDSE-GL-F DDR DRAM, 128MX8, 0.225ns, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78 Elpida Memory Inc W631GG8MB-12 vs EDJ1108BDSE-GL-F
H5TQ1G83DFR-RDI DDR DRAM, 128MX8, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78 SK Hynix Inc W631GG8MB-12 vs H5TQ1G83DFR-RDI
MT41J128M8HX-125IT:E DDR DRAM, 128MX8, CMOS, PBGA78, 9 X 11.50 MM, LEAD FREE, FBGA-78 Micron Technology Inc W631GG8MB-12 vs MT41J128M8HX-125IT:E
EDJ1108BFSE-DJ-F DDR DRAM, 128MX8, 0.255ns, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78 Elpida Memory Inc W631GG8MB-12 vs EDJ1108BFSE-DJ-F
W631GG8KB-15 DDR DRAM, 128MX8, 0.255ns, CMOS, PBGA78, WBGA-78 Winbond Electronics Corp W631GG8MB-12 vs W631GG8KB-15
MT41J256M8THV-15:D DDR DRAM, 128MX8, CMOS, PBGA78, 8 X 11.50 MM, LEAD FREE, FBGA-78 Micron Technology Inc W631GG8MB-12 vs MT41J256M8THV-15:D
MT41J128M8HX-187EAT:D DDR DRAM, 128MX8, CMOS, PBGA78, 9 X 11.50 MM, LEAD FREE, FBGA-78 Micron Technology Inc W631GG8MB-12 vs MT41J128M8HX-187EAT:D
MT41J256M8THV-187E:F DDR DRAM, 128MX8, CMOS, PBGA78, 8 X 11.50 MM, LEAD FREE, FBGA-78 Micron Technology Inc W631GG8MB-12 vs MT41J256M8THV-187E:F
MT41J128M8JP-125IT:F DDR DRAM, 128MX8, CMOS, PBGA78, 8 X 11.50 MM, LEAD FREE, FBGA-78 Micron Technology Inc W631GG8MB-12 vs MT41J128M8JP-125IT:F

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