Datasheets
W08G by:

Bridge Rectifier Diode, 1A, 800V V(RRM),

Part Details for W08G by Galaxy Microelectronics

Overview of W08G by Galaxy Microelectronics

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Part Details for W08G

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W08G Part Data Attributes:

W08G Galaxy Microelectronics
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W08G Galaxy Microelectronics Bridge Rectifier Diode, 1A, 800V V(RRM),
Rohs Code Yes
Part Life Cycle Code Contact Manufacturer
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Reach Compliance Code unknown
ECCN Code EAR99
Breakdown Voltage-Min 800 V
Configuration BRIDGE, 4 ELEMENTS
Diode Type BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.1 V
Non-rep Pk Forward Current-Max 30 A
Number of Elements 4
Number of Phases 1
Operating Temperature-Max 125 °C
Output Current-Max 1 A
Peak Reflow Temperature (Cel) 260
Rep Pk Reverse Voltage-Max 800 V
Surface Mount NO

Alternate Parts for W08G

This table gives cross-reference parts and alternative options found for W08G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of W08G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
DBLS106GC1G Bridge Rectifier Diode, 1A, 800V V(RRM), Taiwan Semiconductor W08G vs DBLS106GC1G
DBLS106GC1 Bridge Rectifier Diode, 1A, 800V V(RRM), Taiwan Semiconductor W08G vs DBLS106GC1
FDB106 Bridge Rectifier Diode, 1A, 800V V(RRM), Galaxy Microelectronics W08G vs FDB106
FDB106S Bridge Rectifier Diode, 1A, 800V V(RRM), Galaxy Microelectronics W08G vs FDB106S
1W08M Bridge Rectifier Diode, 1A, 800V V(RRM), Taiwan Semiconductor W08G vs 1W08M
1W08GM Bridge Rectifier Diode, 1A, 800V V(RRM), Taiwan Semiconductor W08G vs 1W08GM

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