VS-10ETF02S-M3
Description: Rectifier Diode, 1 Phase, 1 Element, 10A, 200V V(RRM), Silicon, TO-263AB, D2PAK-3/2

Overview of VS-10ETF02S-M3 by Vishay Intertechnologies

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Industrial Automation

Price & Stock for VS-10ETF02S-M3 by Vishay Intertechnologies

Part # Manufacturer Description Stock Price Buy
DISTI # 49Y3029
Newark New Input Diodes - D2Pak |Vishay VS-10ETF02S-M3 Min Qty: 8000 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 2,500 $0.8170
$0.8170 Buy Now
DISTI # VS-10ETF02S-M3
Avnet Americas New Input Diodes - D2PAK-e3 - Rail/Tube (Alt: VS-10ETF02S-M3) RoHS: Compliant Min Qty: 8000 Package Multiple: 1000 Lead time: 17 Weeks, 0 Days Container: Tube 0
  • 8,000 $0.8404
  • 10,000 $0.8284
  • 18,000 $0.8106
  • 40,000 $0.7927
  • 80,000 $0.7748
  • 400,000 $0.7629
  • 800,000 $0.7450
$0.7450 / $0.8404 Buy Now
DISTI # 78-VS-10ETF02S-M3
Mouser Electronics Schottky Diodes & Rectifiers New Input Diodes - D2PAK-e3 RoHS: Compliant 0
  • 8,000 $0.7700
  • 10,000 $0.7450
$0.7450 / $0.7700 Order Now
DISTI # VS-10ETF02S-M3
TTI Schottky Diodes & Rectifiers New Input Diodes - D2PAK-e3 RoHS: Compliant pbFree: Pb-Free Min Qty: 8000 Package Multiple: 50 Container: Tube Americas - 0
  • 8,000 $0.7600
$0.7600 Buy Now
DISTI # VS-10ETF02S-M3
TME Diode: rectifying, SMD, 200V, 10A, D2PAK,TO263AB Min Qty: 1 0
  • 1 $1.6100
  • 10 $1.4400
  • 50 $1.2700
  • 250 $1.1400
  • 1,000 $1.0600
  • 4,000 $0.9800
  • 8,000 $0.9500
$0.9500 / $1.6100 RFQ
DISTI # VS-10ETF02S-M3
EBV Elektronik (Alt: VS-10ETF02S-M3) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 18 Weeks, 0 Days EBV - 0
Buy Now

CAD Models for VS-10ETF02S-M3 by Vishay Intertechnologies
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Part Data Attributes for VS-10ETF02S-M3 by Vishay Intertechnologies

VS-10ETF02S-M3
Vishay Intertechnologies
-
-
Rohs Code
Yes
Part Life Cycle Code
Active
Ihs Manufacturer
VISHAY INTERTECHNOLOGY INC
Reach Compliance Code
compliant
ECCN Code
EAR99
HTS Code
8541.10.00.80
Factory Lead Time
17 Weeks
Additional Feature
FREE WHEELING DIODE
Application
FAST SOFT RECOVERY
Case Connection
CATHODE
Configuration
SINGLE
Diode Element Material
SILICON
Diode Type
RECTIFIER DIODE
Forward Voltage-Max (VF)
1.2 V
JEDEC-95 Code
TO-263AB
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Non-rep Pk Forward Current-Max
140 A
Number of Elements
1
Number of Phases
1
Number of Terminals
2
Operating Temperature-Max
150 °C
Operating Temperature-Min
-40 °C
Output Current-Max
10 A
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
245
Rep Pk Reverse Voltage-Max
200 V
Reverse Current-Max
100 µA
Reverse Recovery Time-Max
0.2 µs
Surface Mount
YES
Terminal Finish
Matte Tin (Sn)
Terminal Form
GULL WING
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
30
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  1. VS-10ETF02S-M3
    Vishay Intertechnologies
    Rectifier Diode, 1 Phase, 1 Element, 10A, 200V V(RRM), Silicon, TO-263AB, D2PAK-3/2
    VS

Alternate Parts for VS-10ETF02S-M3

This table gives cross-reference parts and alternative options found for VS-10ETF02S-M3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of VS-10ETF02S-M3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
VS-10ETF02STRR-M3 Rectifier Diode, 1 Phase, 1 Element, 10A, 200V V(RRM), Silicon, TO-263AB, D2PAK-3/2 Vishay Intertechnologies VS-10ETF02S-M3 vs VS-10ETF02STRR-M3
VS-10ETF02STRLPBF Rectifier Diode, 1 Phase, 1 Element, 10A, 200V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, SMD-220, D2PAK-3 Vishay Intertechnologies VS-10ETF02S-M3 vs VS-10ETF02STRLPBF
10ETF02SPBF Rectifier Diode, 1 Phase, 10A, 200V V(RRM), Silicon, D2PAK-3 International Rectifier VS-10ETF02S-M3 vs 10ETF02SPBF
10ETF02S Rectifier Diode, 1 Phase, 1 Element, 10A, 200V V(RRM), Silicon, D2PAK-3 International Rectifier VS-10ETF02S-M3 vs 10ETF02S
10ETF02STRL Rectifier Diode, 1 Phase, 10A, 200V V(RRM), Silicon, D2PAK-3 Vishay Semiconductors VS-10ETF02S-M3 vs 10ETF02STRL
Part Number Description Manufacturer Compare
FEPB16AT Rectifier Diode, 1 Phase, 2 Element, 16A, 50V V(RRM), Silicon, TO-263AB, PLASTIC, TO-263, D2PAK-3 Sensitron Semiconductors VS-10ETF02S-M3 vs FEPB16AT
MURB1620CT Rectifier Diode, 1 Phase, 2 Element, 16A, 200V V(RRM), Silicon, PLASTIC, D2PAK-3 Lite-On Semiconductor Corporation VS-10ETF02S-M3 vs MURB1620CT
FEPB16CT-G Rectifier Diode, 1 Phase, 2 Element, 16A, 150V V(RRM), Silicon, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3 Sensitron Semiconductors VS-10ETF02S-M3 vs FEPB16CT-G
BYVB32-150-E3/81 DIODE 9 A, 150 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode Vishay Semiconductors VS-10ETF02S-M3 vs BYVB32-150-E3/81
BYQ28EB-150-E3/81 Rectifier Diode, 1 Phase, 2 Element, 5A, 150V V(RRM), Silicon, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3 Vishay Intertechnologies VS-10ETF02S-M3 vs BYQ28EB-150-E3/81
C16T40FTRLH Rectifier Diode, 1 Phase, 2 Element, 16A, 400V V(RRM), Silicon, TO-263AB, KYOCERA Corporation VS-10ETF02S-M3 vs C16T40FTRLH
MURB1620CT-1 Rectifier Diode, 1 Phase, 2 Element, 8A, 200V V(RRM), Silicon, TO-262AA, MODIFIED TO-262, 3 PIN Vishay Intertechnologies VS-10ETF02S-M3 vs MURB1620CT-1
MURB1620CT Rectifier Diode, 1 Phase, 2 Element, 16A, 200V V(RRM), Silicon, PLASTIC, D2PAK-3 Diodes Incorporated VS-10ETF02S-M3 vs MURB1620CT
BYVB32-150-E3/81 Rectifier Diode, 1 Phase, 2 Element, 9A, 150V V(RRM), Silicon, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3 Vishay Intertechnologies VS-10ETF02S-M3 vs BYVB32-150-E3/81
VS-MURB1620CT-1-M3 Rectifier Diode, 1 Phase, 2 Element, 8A, 200V V(RRM), Silicon, TO-262AA, Vishay Intertechnologies VS-10ETF02S-M3 vs VS-MURB1620CT-1-M3

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