Datasheets
VG26S4265DJ-50 by: Vanguard International Semiconductor Corporation

EDO DRAM, 256KX16, 50ns, CMOS, PDSO40, 0.400 INCH, SOJ-40

Part Details for VG26S4265DJ-50 by Vanguard International Semiconductor Corporation

Overview of VG26S4265DJ-50 by Vanguard International Semiconductor Corporation

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Part Details for VG26S4265DJ-50

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VG26S4265DJ-50 Part Data Attributes

VG26S4265DJ-50 Vanguard International Semiconductor Corporation
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VG26S4265DJ-50 Vanguard International Semiconductor Corporation EDO DRAM, 256KX16, 50ns, CMOS, PDSO40, 0.400 INCH, SOJ-40
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer VANGUARD INTERNATIONAL SEMICONDUCTOR CORP
Part Package Code SOJ
Package Description SOJ, SOJ40,.44
Pin Count 40
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.02
Access Mode FAST PAGE WITH EDO
Access Time-Max 50 ns
Additional Feature RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH
I/O Type COMMON
JESD-30 Code R-PDSO-J40
JESD-609 Code e0
Length 26.04 mm
Memory Density 4194304 bit
Memory IC Type EDO DRAM
Memory Width 16
Number of Functions 1
Number of Ports 1
Number of Terminals 40
Number of Words 262144 words
Number of Words Code 256000
Operating Mode ASYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 256KX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code SOJ
Package Equivalence Code SOJ40,.44
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Qualification Status Not Qualified
Refresh Cycles 512
Seated Height-Max 3.76 mm
Self Refresh YES
Standby Current-Max 0.002 A
Supply Current-Max 0.18 mA
Supply Voltage-Max (Vsup) 5.5 V
Supply Voltage-Min (Vsup) 4.5 V
Supply Voltage-Nom (Vsup) 5 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish TIN LEAD
Terminal Form J BEND
Terminal Pitch 1.27 mm
Terminal Position DUAL
Width 10.16 mm

Alternate Parts for VG26S4265DJ-50

This table gives cross-reference parts and alternative options found for VG26S4265DJ-50. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of VG26S4265DJ-50, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
V53C16258HK50I EDO DRAM, 256KX16, 50ns, CMOS, PDSO40, PLASTIC, SOJ-40 Mosel Vitelic Corporation VG26S4265DJ-50 vs V53C16258HK50I
HYB514265BJ-50 EDO DRAM, 256KX16, 50ns, CMOS, PDSO40 Siemens VG26S4265DJ-50 vs HYB514265BJ-50
UPD42S4210ALE-50 IC,DRAM,EDO,256KX16,CMOS,SOJ,40PIN,PLASTIC Renesas Electronics Corporation VG26S4265DJ-50 vs UPD42S4210ALE-50
AS4C256K16E0-50JC EDO DRAM, 256KX16, 50ns, CMOS, PDSO40, 0.400 INCH, PLASTIC, SOJ-40 Alliance Semiconductor Corporation VG26S4265DJ-50 vs AS4C256K16E0-50JC
IC41C16256-50K EDO DRAM, 256KX16, 50ns, CMOS, PDSO40, 0.400 INCH, SOJ-40 Integrated Silicon Solution Inc VG26S4265DJ-50 vs IC41C16256-50K
TC514265DJS-50 IC 256K X 16 EDO DRAM, 50 ns, PDSO40, 0.400 INCH, PLASTIC, SOJ-40, Dynamic RAM Toshiba America Electronic Components VG26S4265DJ-50 vs TC514265DJS-50
V53C16258SHK50I EDO DRAM, 256KX16, 50ns, CMOS, PDSO40, PLASTIC, SOJ-40 Mosel Vitelic Corporation VG26S4265DJ-50 vs V53C16258SHK50I
HYB514175BJ-50 EDO DRAM, 256KX16, 50ns, CMOS, PDSO40, 0.400 INCH, PLASTIC, SOJ-40 Infineon Technologies AG VG26S4265DJ-50 vs HYB514175BJ-50
V53C16258HK50 EDO DRAM, 256KX16, 50ns, CMOS, PDSO40, PLASTIC, SOJ-40 Mosel Vitelic Corporation VG26S4265DJ-50 vs V53C16258HK50
MSM514265B-50JS EDO DRAM, 256KX16, 50ns, CMOS, PDSO40, 0.400 INCH, PLASTIC, SOJ-40 OKI Electric Industry Co Ltd VG26S4265DJ-50 vs MSM514265B-50JS
Part Number Description Manufacturer Compare
HYB514175BJ-50 EDO DRAM, 256KX16, 50ns, CMOS, PDSO40, 0.400 INCH, PLASTIC, SOJ-40 Infineon Technologies AG VG26S4265DJ-50 vs HYB514175BJ-50
UPD424210AG5-50 EDO DRAM, 256KX16, 50ns, CMOS, PDSO40, 0.400 INCH, PLASTIC, TSOP2-44/40 NEC Electronics America Inc VG26S4265DJ-50 vs UPD424210AG5-50
V53C16258HK50 EDO DRAM, 256KX16, 50ns, CMOS, PDSO40, PLASTIC, SOJ-40 Mosel Vitelic Corporation VG26S4265DJ-50 vs V53C16258HK50
KM416C254DT-L5 EDO DRAM, 256KX16, 50ns, CMOS, PDSO40, 0.400 INCH, TSOP2-44/40 Samsung Semiconductor VG26S4265DJ-50 vs KM416C254DT-L5
UPD42S4210ALE-50 EDO DRAM, 256KX16, 50ns, CMOS, PDSO40, 0.400 INCH, PLASTIC, SOJ-40 NEC Electronics America Inc VG26S4265DJ-50 vs UPD42S4210ALE-50
HYB514175BJL-50 EDO DRAM, 256KX16, 50ns, CMOS, PDSO40, 0.400 INCH, PLASTIC, SOJ-40 Infineon Technologies AG VG26S4265DJ-50 vs HYB514175BJL-50
M5M44265CJ-5S EDO DRAM, 256KX16, 50ns, CMOS, PDSO40, 0.400 INCH, 1.27 MM PITCH, PLASTIC, SOJ-40 Mitsubishi Electric VG26S4265DJ-50 vs M5M44265CJ-5S
NN514265ATT-50 EDO DRAM, 256KX16, 50ns, CMOS, PDSO40 United Microelectronics Corporation VG26S4265DJ-50 vs NN514265ATT-50
V53C16258SHK50I EDO DRAM, 256KX16, 50ns, CMOS, PDSO40, PLASTIC, SOJ-40 Mosel Vitelic Corporation VG26S4265DJ-50 vs V53C16258SHK50I
AS4C256K16E0-50JC EDO DRAM, 256KX16, 50ns, CMOS, PDSO40, 0.400 INCH, PLASTIC, SOJ-40 Alliance Semiconductor Corporation VG26S4265DJ-50 vs AS4C256K16E0-50JC

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