Part Details for UT4411G-S08-R by Unisonic Technologies Co Ltd
Overview of UT4411G-S08-R by Unisonic Technologies Co Ltd
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for UT4411G-S08-R
UT4411G-S08-R CAD Models
UT4411G-S08-R Part Data Attributes
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UT4411G-S08-R
Unisonic Technologies Co Ltd
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Datasheet
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UT4411G-S08-R
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 8A I(D), 30V, 0.032ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE, SOP-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | UNISONIC TECHNOLOGIES CO LTD | |
| Part Package Code | SOT | |
| Package Description | SMALL OUTLINE, R-PDSO-G8 | |
| Pin Count | 8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 8 A | |
| Drain-source On Resistance-Max | 0.032 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G8 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | P-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 40 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for UT4411G-S08-R
This table gives cross-reference parts and alternative options found for UT4411G-S08-R. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of UT4411G-S08-R, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF7726TR | Power Field-Effect Transistor, 7A I(D), 30V, 0.026ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 | International Rectifier | UT4411G-S08-R vs IRF7726TR |
| UT4411L-S08-T | Power Field-Effect Transistor, 8A I(D), 30V, 0.032ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SOP-8 | Unisonic Technologies Co Ltd | UT4411G-S08-R vs UT4411L-S08-T |
| AP4433GM-HF | TRANSISTOR 7.4 A, 30 V, 0.03 ohm, P-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8, FET General Purpose Power | Advanced Power Electronics Corp | UT4411G-S08-R vs AP4433GM-HF |
| IRF7726PBF | Power Field-Effect Transistor, 7A I(D), 30V, 0.026ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 | Infineon Technologies AG | UT4411G-S08-R vs IRF7726PBF |
| UT4411L-S08-R | Power Field-Effect Transistor, 8A I(D), 30V, 0.032ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SOP-8 | Unisonic Technologies Co Ltd | UT4411G-S08-R vs UT4411L-S08-R |
| IRF7726PBF | Power Field-Effect Transistor, 7A I(D), 30V, 0.026ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8 | International Rectifier | UT4411G-S08-R vs IRF7726PBF |
| IRF7726TRPBF | Power Field-Effect Transistor, 7A I(D), 30V, 0.026ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 | Infineon Technologies AG | UT4411G-S08-R vs IRF7726TRPBF |
| IRF7726TR | Power Field-Effect Transistor, 7A I(D), 30V, 0.026ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 | Infineon Technologies AG | UT4411G-S08-R vs IRF7726TR |
| UT4411G-S08-T | Power Field-Effect Transistor, 8A I(D), 30V, 0.032ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE, SOP-8 | Unisonic Technologies Co Ltd | UT4411G-S08-R vs UT4411G-S08-T |
| IRF7726 | Power Field-Effect Transistor, 7A I(D), 30V, 0.026ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 | Infineon Technologies AG | UT4411G-S08-R vs IRF7726 |