Part Details for IRF7726 by Infineon Technologies AG
Overview of IRF7726 by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (6 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRF7726
Part # | Distributor | Description | Stock | Price | Buy | |
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Chip1Cloud | Power MOSFET(Vdss=-30V) | MOSFET P-CH 30V 7A MICRO8 | 10544 |
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RFQ | |
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Win Source Electronics | Power MOSFET(Vdss=-30V) | MOSFET P-CH 30V 7A MICRO8 | 40773 |
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$0.4340 / $0.6500 | Buy Now |
Part Details for IRF7726
IRF7726 CAD Models
IRF7726 Part Data Attributes
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IRF7726
Infineon Technologies AG
Buy Now
Datasheet
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IRF7726
Infineon Technologies AG
Power Field-Effect Transistor, 7A I(D), 30V, 0.026ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SOIC-8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Additional Feature | ULTRA LOW RESISTANCE | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 7 A | |
Drain-source On Resistance-Max | 0.026 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G8 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | P-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 28 A | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRF7726
This table gives cross-reference parts and alternative options found for IRF7726. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7726, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRF7726TR | Power Field-Effect Transistor, 7A I(D), 30V, 0.026ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 | Infineon Technologies AG | IRF7726 vs IRF7726TR |
IRF7726PBF | Power Field-Effect Transistor, 7A I(D), 30V, 0.026ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 | Infineon Technologies AG | IRF7726 vs IRF7726PBF |
IRF7726TR | Power Field-Effect Transistor, 7A I(D), 30V, 0.026ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 | International Rectifier | IRF7726 vs IRF7726TR |
IRF7726TRPBF | Power Field-Effect Transistor, 7A I(D), 30V, 0.026ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 | International Rectifier | IRF7726 vs IRF7726TRPBF |
IRF7726TRPBF | Power Field-Effect Transistor, 7A I(D), 30V, 0.026ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 | Infineon Technologies AG | IRF7726 vs IRF7726TRPBF |
IRF7726PBF | Power Field-Effect Transistor, 7A I(D), 30V, 0.026ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MICRO-8 | International Rectifier | IRF7726 vs IRF7726PBF |