Datasheets
UT2301L-AE2-R by: Unisonic Technologies Co Ltd

Power Field-Effect Transistor, 2.8A I(D), 20V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, LEAD FREE PACKAGE-3

Part Details for UT2301L-AE2-R by Unisonic Technologies Co Ltd

Overview of UT2301L-AE2-R by Unisonic Technologies Co Ltd

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Part Details for UT2301L-AE2-R

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UT2301L-AE2-R Part Data Attributes

UT2301L-AE2-R Unisonic Technologies Co Ltd
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UT2301L-AE2-R Unisonic Technologies Co Ltd Power Field-Effect Transistor, 2.8A I(D), 20V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, LEAD FREE PACKAGE-3
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer UNISONIC TECHNOLOGIES CO LTD
Part Package Code SOT-23
Package Description SMALL OUTLINE, R-PDSO-G3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.21.00.95
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 2.8 A
Drain-source On Resistance-Max 0.13 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 56 pF
JEDEC-95 Code TO-236
JESD-30 Code R-PDSO-G3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type P-CHANNEL
Power Dissipation Ambient-Max 0.5 W
Power Dissipation-Max (Abs) 0.5 W
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for UT2301L-AE2-R

This table gives cross-reference parts and alternative options found for UT2301L-AE2-R. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of UT2301L-AE2-R, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
DMP3160L Power Field-Effect Transistor, 2.7A I(D), 20V, 0.122ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 Diodes Incorporated UT2301L-AE2-R vs DMP3160L
UT2327L-AE3-R Power Field-Effect Transistor, 2.6A I(D), 20V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE PACKAGE-3 Unisonic Technologies Co Ltd UT2301L-AE2-R vs UT2327L-AE3-R
UT2301G-AE3-R Power Field-Effect Transistor, 2.8A I(D), 20V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE PACKAGE-3 Unisonic Technologies Co Ltd UT2301L-AE2-R vs UT2301G-AE3-R
AF2301PWA Power Field-Effect Transistor, 2.6A I(D), 20V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN Integrated Circuit Technology Corp UT2301L-AE2-R vs AF2301PWA

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