Part Details for UT2301G-AE3-R by Unisonic Technologies Co Ltd
Overview of UT2301G-AE3-R by Unisonic Technologies Co Ltd
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for UT2301G-AE3-R
UT2301G-AE3-R CAD Models
UT2301G-AE3-R Part Data Attributes
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UT2301G-AE3-R
Unisonic Technologies Co Ltd
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Datasheet
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UT2301G-AE3-R
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 2.8A I(D), 20V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE PACKAGE-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | UNISONIC TECHNOLOGIES CO LTD | |
| Package Description | SMALL OUTLINE, R-PDSO-G3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.21.00.95 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 2.8 A | |
| Drain-source On Resistance-Max | 0.13 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 56 pF | |
| JESD-30 Code | R-PDSO-G3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation Ambient-Max | 0.6 W | |
| Power Dissipation-Max (Abs) | 0.6 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for UT2301G-AE3-R
This table gives cross-reference parts and alternative options found for UT2301G-AE3-R. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of UT2301G-AE3-R, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| UT2301L-AE3-R | Unisonic Technologies Co Ltd | Check for Price | Power Field-Effect Transistor, 2.8A I(D), 20V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE PACKAGE-3 | UT2301G-AE3-R vs UT2301L-AE3-R |
| AF2301PW | Integrated Circuit Technology Corp | Check for Price | Power Field-Effect Transistor, 2.6A I(D), 20V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN | UT2301G-AE3-R vs AF2301PW |
| UT2327L-AE3-R | Unisonic Technologies Co Ltd | Check for Price | Power Field-Effect Transistor, 2.6A I(D), 20V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE PACKAGE-3 | UT2301G-AE3-R vs UT2327L-AE3-R |
| UT2301L-AE2-R | Unisonic Technologies Co Ltd | Check for Price | Power Field-Effect Transistor, 2.8A I(D), 20V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, LEAD FREE PACKAGE-3 | UT2301G-AE3-R vs UT2301L-AE2-R |
| UT108N03G-TN3-T | Unisonic Technologies Co Ltd | Check for Price | Power Field-Effect Transistor, 2.8A I(D), 20V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE PACKAGE-3 | UT2301G-AE3-R vs UT108N03G-TN3-T |