There are no models available for this part yet.
Overview of UT2301G-AE3-R by Unisonic Technologies Co Ltd
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 4 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
CAD Models for UT2301G-AE3-R by Unisonic Technologies Co Ltd
Part Data Attributes for UT2301G-AE3-R by Unisonic Technologies Co Ltd
|
|
---|---|
Rohs Code
|
Yes
|
Part Life Cycle Code
|
Active
|
Ihs Manufacturer
|
UNISONIC TECHNOLOGIES CO LTD
|
Package Description
|
SMALL OUTLINE, R-PDSO-G3
|
Pin Count
|
3
|
Reach Compliance Code
|
compliant
|
ECCN Code
|
EAR99
|
HTS Code
|
8541.21.00.95
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min
|
20 V
|
Drain Current-Max (ID)
|
2.8 A
|
Drain-source On Resistance-Max
|
0.13 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
Feedback Cap-Max (Crss)
|
56 pF
|
JESD-30 Code
|
R-PDSO-G3
|
Number of Elements
|
1
|
Number of Terminals
|
3
|
Operating Mode
|
ENHANCEMENT MODE
|
Operating Temperature-Max
|
150 °C
|
Package Body Material
|
PLASTIC/EPOXY
|
Package Shape
|
RECTANGULAR
|
Package Style
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel)
|
NOT SPECIFIED
|
Polarity/Channel Type
|
P-CHANNEL
|
Power Dissipation Ambient-Max
|
0.6 W
|
Power Dissipation-Max (Abs)
|
0.6 W
|
Qualification Status
|
Not Qualified
|
Surface Mount
|
YES
|
Terminal Form
|
GULL WING
|
Terminal Position
|
DUAL
|
Time@Peak Reflow Temperature-Max (s)
|
NOT SPECIFIED
|
Transistor Application
|
SWITCHING
|
Transistor Element Material
|
SILICON
|
Alternate Parts for UT2301G-AE3-R
This table gives cross-reference parts and alternative options found for UT2301G-AE3-R. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of UT2301G-AE3-R, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
DMP3160L | Power Field-Effect Transistor, 2.7A I(D), 20V, 0.122ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 | Diodes Incorporated | UT2301G-AE3-R vs DMP3160L |
UT2301L-AE2-R | Power Field-Effect Transistor, 2.8A I(D), 20V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, LEAD FREE PACKAGE-3 | Unisonic Technologies Co Ltd | UT2301G-AE3-R vs UT2301L-AE2-R |
UT2327L-AE3-R | Power Field-Effect Transistor, 2.6A I(D), 20V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE PACKAGE-3 | Unisonic Technologies Co Ltd | UT2301G-AE3-R vs UT2327L-AE3-R |
AF2301PWA | Power Field-Effect Transistor, 2.6A I(D), 20V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN | Integrated Circuit Technology Corp | UT2301G-AE3-R vs AF2301PWA |