Datasheets
UPD4564841G5-A10-9JF by:

Synchronous DRAM, 8MX8, 6ns, MOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54

Part Details for UPD4564841G5-A10-9JF by NEC Electronics America Inc

Overview of UPD4564841G5-A10-9JF by NEC Electronics America Inc

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Applications Education and Research Industrial Automation Energy and Power Systems Transportation and Logistics Renewable Energy Electronic Manufacturing Automotive

Part Details for UPD4564841G5-A10-9JF

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UPD4564841G5-A10-9JF Part Data Attributes

UPD4564841G5-A10-9JF NEC Electronics America Inc
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UPD4564841G5-A10-9JF NEC Electronics America Inc Synchronous DRAM, 8MX8, 6ns, MOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54
Part Life Cycle Code Obsolete
Ihs Manufacturer NEC ELECTRONICS AMERICA INC
Package Description TSOP2,
Reach Compliance Code unknown
Access Mode FOUR BANK PAGE BURST
Access Time-Max 6 ns
Additional Feature AUTO/SELF REFRESH
JESD-30 Code R-PDSO-G54
Length 22.22 mm
Memory Density 67108864 bit
Memory IC Type SYNCHRONOUS DRAM
Memory Width 8
Number of Functions 1
Number of Ports 1
Number of Terminals 54
Number of Words 8388608 words
Number of Words Code 8000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 8MX8
Package Body Material PLASTIC/EPOXY
Package Code TSOP2
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE
Qualification Status Not Qualified
Seated Height-Max 1.2 mm
Self Refresh YES
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 3 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount YES
Technology MOS
Temperature Grade COMMERCIAL
Terminal Form GULL WING
Terminal Pitch 0.8 mm
Terminal Position DUAL
Width 10.16 mm

Alternate Parts for UPD4564841G5-A10-9JF

This table gives cross-reference parts and alternative options found for UPD4564841G5-A10-9JF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of UPD4564841G5-A10-9JF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MB81F64842D-102FN Synchronous DRAM, 8MX8, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 FUJITSU Semiconductor Limited UPD4564841G5-A10-9JF vs MB81F64842D-102FN
HY57V658020ATC-10S Synchronous DRAM, 8MX8, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 SK Hynix Inc UPD4564841G5-A10-9JF vs HY57V658020ATC-10S
UPD4564841G5-A10-9JF Synchronous DRAM, 8MX8, 6ns, MOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 Elpida Memory Inc UPD4564841G5-A10-9JF vs UPD4564841G5-A10-9JF
NT56V6610C0T-8A Synchronous DRAM, 8MX8, 6ns, CMOS, PDSO54, 0.400 INCH, SSOP2-54 Nanya Technology Corporation UPD4564841G5-A10-9JF vs NT56V6610C0T-8A
MB81F64842D-102LFN 8MX8 SYNCHRONOUS DRAM, 6ns, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 FUJITSU Semiconductor Limited UPD4564841G5-A10-9JF vs MB81F64842D-102LFN
KM48S8030DT-G800 Synchronous DRAM, 8MX8, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor UPD4564841G5-A10-9JF vs KM48S8030DT-G800
MB81F64842C-103LFN Synchronous DRAM, 8MX8, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 FUJITSU Semiconductor Limited UPD4564841G5-A10-9JF vs MB81F64842C-103LFN
HY57V658021TC-8 Synchronous DRAM, 8MX8, 6ns, CMOS, PDSO54, 0.400 INCH, 0.80 MM PITCH, TSOP2-54 SK Hynix Inc UPD4564841G5-A10-9JF vs HY57V658021TC-8
IBM0364804CT3C-260 Synchronous DRAM, 8MX8, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 IBM UPD4564841G5-A10-9JF vs IBM0364804CT3C-260
MB81F64842B-103EFN Synchronous DRAM, 8MX8, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 FUJITSU Semiconductor Limited UPD4564841G5-A10-9JF vs MB81F64842B-103EFN
Part Number Description Manufacturer Compare
KM48S8030BT-GH Synchronous DRAM, 8MX8, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor UPD4564841G5-A10-9JF vs KM48S8030BT-GH
MB81F64842C-102FN Synchronous DRAM, 8MX8, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 FUJITSU Limited UPD4564841G5-A10-9JF vs MB81F64842C-102FN
HYB39S64800ETL-8 Synchronous DRAM, 8MX8, 6ns, CMOS, PDSO54, 10.16 X 22.22 MM, 0.80 MM PITCH, PLASTIC, TSOP2-54 Infineon Technologies AG UPD4564841G5-A10-9JF vs HYB39S64800ETL-8
VG36648041BTS-8HA Synchronous DRAM, 8MX8, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP-54 Vanguard International Semiconductor Corporation UPD4564841G5-A10-9JF vs VG36648041BTS-8HA
KM48S8030CT-G7 Synchronous DRAM, 8MX8, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor UPD4564841G5-A10-9JF vs KM48S8030CT-G7
GM72V66841ELT-7K Synchronous DRAM, 8MX8, 6ns, CMOS, PDSO54, LG Semicon Co Ltd UPD4564841G5-A10-9JF vs GM72V66841ELT-7K
HY57V658020BTC-10P Synchronous DRAM, 8MX8, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 SK Hynix Inc UPD4564841G5-A10-9JF vs HY57V658020BTC-10P
VG36648041BT-8HP Synchronous DRAM, 8MX8, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP-54 Vanguard International Semiconductor Corporation UPD4564841G5-A10-9JF vs VG36648041BT-8HP
MB81F64842C-102LFN Synchronous DRAM, 8MX8, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 FUJITSU Limited UPD4564841G5-A10-9JF vs MB81F64842C-102LFN
GM72V66841ELT-7J Synchronous DRAM, 8MX8, 6ns, CMOS, PDSO54, 0.400 INCH, TSOP2-54 SK Hynix Inc UPD4564841G5-A10-9JF vs GM72V66841ELT-7J

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