Memory
MB81F64842C-103LFN
Description: Synchronous DRAM, 8MX8, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54

Overview of MB81F64842C-103LFN by FUJITSU Semiconductor Limited

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Part Data Attributes for MB81F64842C-103LFN by FUJITSU Semiconductor Limited

MB81F64842C-103LFN
FUJITSU Semiconductor Limited
-
-
Part Life Cycle Code
Obsolete
Ihs Manufacturer
FUJITSU SEMICONDUCTOR AMERICA INC
Part Package Code
TSOP2
Package Description
TSOP2,
Pin Count
54
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8542.32.00.02
Access Mode
FOUR BANK PAGE BURST
Access Time-Max
6 ns
Additional Feature
AUTO/SELF REFRESH
JESD-30 Code
R-PDSO-G54
Length
22.22 mm
Memory Density
67108864 bit
Memory IC Type
SYNCHRONOUS DRAM
Memory Width
8
Number of Functions
1
Number of Ports
1
Number of Terminals
54
Number of Words
8388608 words
Number of Words Code
8000000
Operating Mode
SYNCHRONOUS
Operating Temperature-Max
70 °C
Operating Temperature-Min
Organization
8MX8
Package Body Material
PLASTIC/EPOXY
Package Code
TSOP2
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE, THIN PROFILE
Qualification Status
Not Qualified
Seated Height-Max
1.2 mm
Self Refresh
YES
Supply Voltage-Max (Vsup)
3.6 V
Supply Voltage-Min (Vsup)
3 V
Supply Voltage-Nom (Vsup)
3.3 V
Surface Mount
YES
Technology
CMOS
Temperature Grade
COMMERCIAL
Terminal Form
GULL WING
Terminal Pitch
0.8 mm
Terminal Position
DUAL
Width
10.16 mm
Want to compare parts?
  1. MB81F64842C-103LFN
    FUJITSU Semiconductor Limited
    Synchronous DRAM, 8MX8, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54
    VS

Alternate Parts for MB81F64842C-103LFN

This table gives cross-reference parts and alternative options found for MB81F64842C-103LFN. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MB81F64842C-103LFN, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
MB81F64842D-102FN Synchronous DRAM, 8MX8, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 FUJITSU Semiconductor Limited MB81F64842C-103LFN vs MB81F64842D-102FN
HY57V658020ATC-10S Synchronous DRAM, 8MX8, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 SK Hynix Inc MB81F64842C-103LFN vs HY57V658020ATC-10S
UPD4564841G5-A10-9JF Synchronous DRAM, 8MX8, 6ns, MOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 Elpida Memory Inc MB81F64842C-103LFN vs UPD4564841G5-A10-9JF
NT56V6610C0T-8A Synchronous DRAM, 8MX8, 6ns, CMOS, PDSO54, 0.400 INCH, SSOP2-54 Nanya Technology Corporation MB81F64842C-103LFN vs NT56V6610C0T-8A
MB81F64842D-102LFN 8MX8 SYNCHRONOUS DRAM, 6ns, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 FUJITSU Semiconductor Limited MB81F64842C-103LFN vs MB81F64842D-102LFN
KM48S8030DT-G800 Synchronous DRAM, 8MX8, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor MB81F64842C-103LFN vs KM48S8030DT-G800
HY57V658021TC-8 Synchronous DRAM, 8MX8, 6ns, CMOS, PDSO54, 0.400 INCH, 0.80 MM PITCH, TSOP2-54 SK Hynix Inc MB81F64842C-103LFN vs HY57V658021TC-8
IBM0364804CT3C-260 Synchronous DRAM, 8MX8, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 IBM MB81F64842C-103LFN vs IBM0364804CT3C-260
MB81F64842B-103EFN Synchronous DRAM, 8MX8, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 FUJITSU Semiconductor Limited MB81F64842C-103LFN vs MB81F64842B-103EFN
MT48LC8M8A2TG-8EL:GIT Synchronous DRAM, 8MX8, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 Micron Technology Inc MB81F64842C-103LFN vs MT48LC8M8A2TG-8EL:GIT
Part Number Description Manufacturer Compare
KM48S8030BT-GH Synchronous DRAM, 8MX8, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor MB81F64842C-103LFN vs KM48S8030BT-GH
MB81F64842C-102FN Synchronous DRAM, 8MX8, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 FUJITSU Limited MB81F64842C-103LFN vs MB81F64842C-102FN
HYB39S64800ETL-8 Synchronous DRAM, 8MX8, 6ns, CMOS, PDSO54, 10.16 X 22.22 MM, 0.80 MM PITCH, PLASTIC, TSOP2-54 Infineon Technologies AG MB81F64842C-103LFN vs HYB39S64800ETL-8
VG36648041BTS-8HA Synchronous DRAM, 8MX8, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP-54 Vanguard International Semiconductor Corporation MB81F64842C-103LFN vs VG36648041BTS-8HA
KM48S8030CT-G7 Synchronous DRAM, 8MX8, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor MB81F64842C-103LFN vs KM48S8030CT-G7
GM72V66841ELT-7K Synchronous DRAM, 8MX8, 6ns, CMOS, PDSO54, LG Semicon Co Ltd MB81F64842C-103LFN vs GM72V66841ELT-7K
HY57V658020BTC-10P Synchronous DRAM, 8MX8, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 SK Hynix Inc MB81F64842C-103LFN vs HY57V658020BTC-10P
VG36648041BT-8HP Synchronous DRAM, 8MX8, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP-54 Vanguard International Semiconductor Corporation MB81F64842C-103LFN vs VG36648041BT-8HP
MB81F64842C-102LFN Synchronous DRAM, 8MX8, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 FUJITSU Limited MB81F64842C-103LFN vs MB81F64842C-102LFN
GM72V66841ELT-7J Synchronous DRAM, 8MX8, 6ns, CMOS, PDSO54, 0.400 INCH, TSOP2-54 SK Hynix Inc MB81F64842C-103LFN vs GM72V66841ELT-7J

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