Datasheets
UPD4564163G5-A10B-9JF by:

Synchronous DRAM, 4MX16, 7ns, MOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54

Part Details for UPD4564163G5-A10B-9JF by NEC Electronics Group

Overview of UPD4564163G5-A10B-9JF by NEC Electronics Group

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Applications Internet of Things (IoT) Environmental Monitoring Industrial Automation Financial Technology (Fintech) Smart Cities Transportation and Logistics Agriculture Technology Telecommunications Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Automotive Consumer Electronics Education and Research Security and Surveillance Audio and Video Systems Computing and Data Storage Healthcare Renewable Energy Entertainment and Gaming Robotics and Drones

Price & Stock for UPD4564163G5-A10B-9JF

Part # Distributor Description Stock Price Buy
Bristol Electronics   9
RFQ
Quest Components SDRAM, 4M x 16, 54 Pin, Plastic, TSOP 1081
  • 1 $3.7500
  • 108 $1.6250
  • 309 $1.5000
$1.5000 / $3.7500 Buy Now
Quest Components SDRAM, 4M x 16, 54 Pin, Plastic, TSOP 136
  • 1 $3.7500
  • 11 $1.8750
  • 108 $1.7500
$1.7500 / $3.7500 Buy Now
Quest Components SDRAM, 4M x 16, 54 Pin, Plastic, TSOP 7
  • 1 $12.0750
  • 2 $10.0625
  • 3 $8.8550
$8.8550 / $12.0750 Buy Now
Quest Components SDRAM, 4M x 16, 54 Pin, Plastic, TSOP 40
  • 1 $3.7500
  • 9 $2.7500
  • 28 $2.5000
$2.5000 / $3.7500 Buy Now

Part Details for UPD4564163G5-A10B-9JF

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UPD4564163G5-A10B-9JF Part Data Attributes:

UPD4564163G5-A10B-9JF NEC Electronics Group
Buy Now Datasheet
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UPD4564163G5-A10B-9JF NEC Electronics Group Synchronous DRAM, 4MX16, 7ns, MOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54
Part Life Cycle Code Obsolete
Ihs Manufacturer NEC ELECTRONICS CORP
Part Package Code TSOP2
Package Description 0.400 INCH, PLASTIC, TSOP2-54
Pin Count 54
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.02
Access Mode FOUR BANK PAGE BURST
Access Time-Max 7 ns
Additional Feature AUTO/SELF REFRESH
JESD-30 Code R-PDSO-G54
Length 22.22 mm
Memory Density 67108864 bit
Memory IC Type SYNCHRONOUS DRAM
Memory Width 16
Number of Functions 1
Number of Ports 1
Number of Terminals 54
Number of Words 4194304 words
Number of Words Code 4000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 4MX16
Package Body Material PLASTIC/EPOXY
Package Code TSOP2
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE
Qualification Status Not Qualified
Seated Height-Max 1.2 mm
Self Refresh YES
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 3 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount YES
Technology MOS
Temperature Grade COMMERCIAL
Terminal Form GULL WING
Terminal Pitch 0.8 mm
Terminal Position DUAL
Width 10.16 mm

Alternate Parts for UPD4564163G5-A10B-9JF

This table gives cross-reference parts and alternative options found for UPD4564163G5-A10B-9JF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of UPD4564163G5-A10B-9JF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HYB39S64162AT-10 Synchronous DRAM, 4MX16, 7ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 Siemens UPD4564163G5-A10B-9JF vs HYB39S64162AT-10
TC59S6416FT-80 IC 4M X 16 SYNCHRONOUS DRAM, 7 ns, PDSO54, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54, Dynamic RAM Toshiba America Electronic Components UPD4564163G5-A10B-9JF vs TC59S6416FT-80
KM416S4030BT-F10 Synchronous DRAM, 4MX16, 7ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor UPD4564163G5-A10B-9JF vs KM416S4030BT-F10
TC59S6416CFTL-10 IC 4M X 16 SYNCHRONOUS DRAM, 7 ns, PDSO54, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54, Dynamic RAM Toshiba America Electronic Components UPD4564163G5-A10B-9JF vs TC59S6416CFTL-10
HYB39S64160AT-10 Synchronous DRAM, 4MX16, 7ns, CMOS, PDSO54, 0.400 INCH, TSOP-54 Siemens UPD4564163G5-A10B-9JF vs HYB39S64160AT-10
AS4SD4M16A2DG-10/883C Synchronous DRAM, 4MX16, 7ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP-54 Micross Components UPD4564163G5-A10B-9JF vs AS4SD4M16A2DG-10/883C
KM416S4030BT-G10 Synchronous DRAM, 4MX16, 7ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor UPD4564163G5-A10B-9JF vs KM416S4030BT-G10
K4S641632C-TC10 Synchronous DRAM, 4MX16, 7ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor UPD4564163G5-A10B-9JF vs K4S641632C-TC10
K4S641632C-TL100 Synchronous DRAM, 4MX16, 7ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor UPD4564163G5-A10B-9JF vs K4S641632C-TL100
HYB39S64160BTL-10 Synchronous DRAM, 4MX16, 7ns, CMOS, PDSO54, 10.16 X 22.22 MM, 0.80 MM PITCH, PLASTIC, TSOP2-54 Infineon Technologies AG UPD4564163G5-A10B-9JF vs HYB39S64160BTL-10
Part Number Description Manufacturer Compare
K4S641632C-TC100 Synchronous DRAM, 4MX16, 7ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor UPD4564163G5-A10B-9JF vs K4S641632C-TC100
UPD4564163G5-A10B-9JF Synchronous DRAM, 4MX16, 7ns, MOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 NEC Electronics America Inc UPD4564163G5-A10B-9JF vs UPD4564163G5-A10B-9JF
TC59S6416BFTL-10 IC 4M X 16 SYNCHRONOUS DRAM, 7 ns, PDSO54, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54, Dynamic RAM Toshiba America Electronic Components UPD4564163G5-A10B-9JF vs TC59S6416BFTL-10
TC59S6416FT-80 IC 4M X 16 SYNCHRONOUS DRAM, 7 ns, PDSO54, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54, Dynamic RAM Toshiba America Electronic Components UPD4564163G5-A10B-9JF vs TC59S6416FT-80
MT48LC4M16A2TG-10 Synchronous DRAM, 4MX16, 7ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP-54 Micron Technology Inc UPD4564163G5-A10B-9JF vs MT48LC4M16A2TG-10
UPD4564163G5-A10BL-9JF Synchronous DRAM, 4MX16, 7ns, MOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 NEC Electronics America Inc UPD4564163G5-A10B-9JF vs UPD4564163G5-A10BL-9JF
AS4SD4M16A2DG-10/883C Synchronous DRAM, 4MX16, 7ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP-54 Micross Components UPD4564163G5-A10B-9JF vs AS4SD4M16A2DG-10/883C
IS42S16400A-10TLI Synchronous DRAM, 4MX16, 7ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, TSOP2-54 Integrated Silicon Solution Inc UPD4564163G5-A10B-9JF vs IS42S16400A-10TLI
IS45S16400-10TA Synchronous DRAM, 4MX16, 7ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 Integrated Silicon Solution Inc UPD4564163G5-A10B-9JF vs IS45S16400-10TA
KM416S4030CT-G10 Synchronous DRAM, 4MX16, 7ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 Samsung Semiconductor UPD4564163G5-A10B-9JF vs KM416S4030CT-G10

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