Part Details for KM416S4030BT-G10 by Samsung Semiconductor
Overview of KM416S4030BT-G10 by Samsung Semiconductor
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
QB-R5F10Y16-TB | Renesas Electronics Corporation | RL78/G10 (R5F10Y16) Target Board | |
67273-G10 | Amphenol Communications Solutions | 67273-G10-QKE HEADER | |
RTE510Y470TGB00000R | Renesas Electronics Corporation | RL78/G10 (R5F10Y47) CPU Board |
Price & Stock for KM416S4030BT-G10
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 10 |
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RFQ | ||
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Quest Components | SDRAM, 4M x 16, 54 Pin, Plastic, TSOP | 91 |
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$2.4000 / $3.6000 | Buy Now |
Part Details for KM416S4030BT-G10
KM416S4030BT-G10 CAD Models
KM416S4030BT-G10 Part Data Attributes
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KM416S4030BT-G10
Samsung Semiconductor
Buy Now
Datasheet
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Compare Parts:
KM416S4030BT-G10
Samsung Semiconductor
Synchronous DRAM, 4MX16, 7ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
Part Package Code | TSOP2 | |
Package Description | TSOP2, TSOP54,.46,32 | |
Pin Count | 54 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.02 | |
Access Mode | FOUR BANK PAGE BURST | |
Access Time-Max | 7 ns | |
Additional Feature | AUTO/SELF REFRESH | |
Clock Frequency-Max (fCLK) | 100 MHz | |
I/O Type | COMMON | |
Interleaved Burst Length | 1,2,4,8 | |
JESD-30 Code | R-PDSO-G54 | |
JESD-609 Code | e0 | |
Length | 22.22 mm | |
Memory Density | 67108864 bit | |
Memory IC Type | SYNCHRONOUS DRAM | |
Memory Width | 16 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 54 | |
Number of Words | 4194304 words | |
Number of Words Code | 4000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 70 °C | |
Operating Temperature-Min | ||
Organization | 4MX16 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | TSOP2 | |
Package Equivalence Code | TSOP54,.46,32 | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE, THIN PROFILE | |
Qualification Status | Not Qualified | |
Refresh Cycles | 4096 | |
Seated Height-Max | 1.2 mm | |
Self Refresh | YES | |
Sequential Burst Length | 1,2,4,8,FP | |
Standby Current-Max | 0.001 A | |
Supply Current-Max | 0.12 mA | |
Supply Voltage-Max (Vsup) | 3.6 V | |
Supply Voltage-Min (Vsup) | 3 V | |
Supply Voltage-Nom (Vsup) | 3.3 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | COMMERCIAL | |
Terminal Finish | TIN LEAD | |
Terminal Form | GULL WING | |
Terminal Pitch | 0.8 mm | |
Terminal Position | DUAL | |
Width | 10.16 mm |
Alternate Parts for KM416S4030BT-G10
This table gives cross-reference parts and alternative options found for KM416S4030BT-G10. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of KM416S4030BT-G10, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
V54C365164VCT8L | Synchronous DRAM, 4MX16, 7ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | Mosel Vitelic Corporation | KM416S4030BT-G10 vs V54C365164VCT8L |
K4S641632D-TC10 | Synchronous DRAM, 4MX16, 7ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Samsung Semiconductor | KM416S4030BT-G10 vs K4S641632D-TC10 |
K4S641632C-TC10 | Synchronous DRAM, 4MX16, 7ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Samsung Semiconductor | KM416S4030BT-G10 vs K4S641632C-TC10 |
TC59S6416FTL-80 | IC 4M X 16 SYNCHRONOUS DRAM, 7 ns, PDSO54, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54, Dynamic RAM | Toshiba America Electronic Components | KM416S4030BT-G10 vs TC59S6416FTL-80 |
MT48LC4M16A1TG-10L | Synchronous DRAM, 4MX16, 7ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP-54 | Micron Technology Inc | KM416S4030BT-G10 vs MT48LC4M16A1TG-10L |
KM416S4030BT-F10 | Synchronous DRAM, 4MX16, 7ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | Samsung Semiconductor | KM416S4030BT-G10 vs KM416S4030BT-F10 |
IS42S16400L-10T | Synchronous DRAM, 4MX16, 7ns, CMOS, PDSO54, 0.400 INCH, TSOP2-54 | Integrated Silicon Solution Inc | KM416S4030BT-G10 vs IS42S16400L-10T |
MT48LC4M16A2TG-10L | Synchronous DRAM, 4MX16, 7ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP-54 | Micron Technology Inc | KM416S4030BT-G10 vs MT48LC4M16A2TG-10L |
TC59S6416BFT-10 | IC 4M X 16 SYNCHRONOUS DRAM, 7 ns, PDSO54, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-54, Dynamic RAM | Toshiba America Electronic Components | KM416S4030BT-G10 vs TC59S6416BFT-10 |
HYB39S64162T-80 | Synchronous DRAM, 4MX16, 7ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54 | Siemens | KM416S4030BT-G10 vs HYB39S64162T-80 |