Datasheets
UGB18BCT-E3/81 by:

Rectifier Diode, 1 Phase, 2 Element, 9A, 100V V(RRM), Silicon, TO-263AB, D2PAK-3/2

Part Details for UGB18BCT-E3/81 by Vishay Intertechnologies

Overview of UGB18BCT-E3/81 by Vishay Intertechnologies

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Applications Education and Research Computing and Data Storage Aerospace and Defense Agriculture Technology Electronic Manufacturing Robotics and Drones

Price & Stock for UGB18BCT-E3/81

Part # Distributor Description Stock Price Buy
DISTI # 12M3548
Newark 18A,100V,20Ns, dual Uf Rect |Vishay UGB18BCT-E3/81 Min Qty: 800 Package Multiple: 1 Date Code: 0 Container: Reel 0
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Part Details for UGB18BCT-E3/81

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UGB18BCT-E3/81 Part Data Attributes:

UGB18BCT-E3/81 Vishay Intertechnologies
Buy Now Datasheet
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UGB18BCT-E3/81 Vishay Intertechnologies Rectifier Diode, 1 Phase, 2 Element, 9A, 100V V(RRM), Silicon, TO-263AB, D2PAK-3/2
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description D2PAK-3/2
Reach Compliance Code compliant
Samacsys Manufacturer Vishay
Additional Feature FREE WHEELING DIODE
Application EFFICIENCY
Case Connection CATHODE
Configuration COMMON CATHODE, 2 ELEMENTS
Diode Element Material SILICON
Diode Type RECTIFIER DIODE
Forward Voltage-Max (VF) 1.2 V
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 175 A
Number of Elements 2
Number of Phases 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Output Current-Max 9 A
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 245
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 100 V
Reverse Current-Max 10 µA
Reverse Recovery Time-Max 0.03 µs
Reverse Test Voltage 100 V
Surface Mount YES
Terminal Finish TIN OVER NICKEL
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30

Alternate Parts for UGB18BCT-E3/81

This table gives cross-reference parts and alternative options found for UGB18BCT-E3/81. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of UGB18BCT-E3/81, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
UGB18BCTHE3/81 Rectifier Diode, 1 Phase, 2 Element, 9A, 100V V(RRM), Silicon, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3 Vishay Intertechnologies UGB18BCT-E3/81 vs UGB18BCTHE3/81
UGB18BCTHE3_A/I Rectifier Diode, Vishay Intertechnologies UGB18BCT-E3/81 vs UGB18BCTHE3_A/I
UGB18BCTHE3/81 DIODE 9 A, 100 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode Vishay Semiconductors UGB18BCT-E3/81 vs UGB18BCTHE3/81
UGB18BCT-E3/45 DIODE 9 A, 100 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode Vishay Semiconductors UGB18BCT-E3/81 vs UGB18BCT-E3/45
UGB18BCTHE3_A/P Rectifier Diode, Vishay Intertechnologies UGB18BCT-E3/81 vs UGB18BCTHE3_A/P
UGB18BCT-E3/81 DIODE 9 A, 100 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode Vishay Semiconductors UGB18BCT-E3/81 vs UGB18BCT-E3/81
Part Number Description Manufacturer Compare
MBRB20200CT-TP Rectifier Diode, Schottky, 1 Phase, 2 Element, 20A, 200V V(RRM), Silicon, D2PAK-3 Micro Commercial Components UGB18BCT-E3/81 vs MBRB20200CT-TP
HER1601PTHC0G Rectifier Diode, 1 Phase, 2 Element, 8A, 50V V(RRM), Silicon, TO-247AD, TO-3P, 3 PIN Taiwan Semiconductor UGB18BCT-E3/81 vs HER1601PTHC0G
SF163{TUBE} Rectifier Diode, 1 Phase, 2 Element, 16A, 150V V(RRM), Silicon Diodes Incorporated UGB18BCT-E3/81 vs SF163{TUBE}
MURB1610CT-BP Rectifier Diode, 1 Phase, 2 Element, 16A, 100V V(RRM), Silicon, D2PAK-3 Micro Commercial Components UGB18BCT-E3/81 vs MURB1610CT-BP
VS-MURB1620CTHM3 Rectifier Diode, 1 Phase, 2 Element, 8A, 200V V(RRM), Silicon, TO-263AB, D2PAK-3/2 Vishay Intertechnologies UGB18BCT-E3/81 vs VS-MURB1620CTHM3
BYQ30EB-200/T3 DIODE 8 A, 200 V, SILICON, RECTIFIER DIODE, Rectifier Diode NXP Semiconductors UGB18BCT-E3/81 vs BYQ30EB-200/T3
BYV79EB-100 DIODE 14 A, 100 V, SILICON, RECTIFIER DIODE, Rectifier Diode NXP Semiconductors UGB18BCT-E3/81 vs BYV79EB-100
934054883118 Rectifier Diode, 1 Phase, 1 Element, 8A, 200V V(RRM), Silicon, WeEn Semiconductor Co Ltd UGB18BCT-E3/81 vs 934054883118
UGB18DCT-E3/81 Rectifier Diode, 1 Phase, 2 Element, 9A, 200V V(RRM), Silicon, TO-263AB, D2PAK-3/2 Vishay Intertechnologies UGB18BCT-E3/81 vs UGB18DCT-E3/81
UGB18DCT-E3/45 DIODE 9 A, 200 V, SILICON, RECTIFIER DIODE, TO-263AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode Vishay Semiconductors UGB18BCT-E3/81 vs UGB18DCT-E3/45

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