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Part Details for TK25N60X by Toshiba America Electronic Components
Overview of TK25N60X by Toshiba America Electronic Components
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for TK25N60X
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
TK25N60X,S1F
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Avnet Americas | Trans MOSFET N-CH 600V 25A 3-Pin TO-247 - Rail/Tube (Alt: TK25N60X,S1F) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 20 Weeks, 0 Days Container: Tube | 0 |
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$2.1453 / $2.5643 | Buy Now |
Part Details for TK25N60X
TK25N60X CAD Models
TK25N60X Part Data Attributes
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TK25N60X
Toshiba America Electronic Components
Buy Now
Datasheet
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Compare Parts:
TK25N60X
Toshiba America Electronic Components
Transistors (Bipolar/MOSFETs/IGBTs) - MOSFETs - Power MOSFET - Nch 500V<VDSS≤700V, Nch 500V<VDSS≤700V
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 20 Weeks | |
| Samacsys Manufacturer | Toshiba | |
| Avalanche Energy Rating (Eas) | 306 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 25 A | |
| Drain-source On Resistance-Max | 0.125 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 100 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for TK25N60X
This table gives cross-reference parts and alternative options found for TK25N60X. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of TK25N60X, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| STB34NM60N | N-channel 600 V, 0.092 Ohm typ., 31.5 A MDmesh II Power MOSFET in D2PAK package | STMicroelectronics | TK25N60X vs STB34NM60N |
| IPI60R099CPAXK | Power Field-Effect Transistor, 31A I(D), 600V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, TO-262, 3 PIN | Infineon Technologies AG | TK25N60X vs IPI60R099CPAXK |
| IPB65R110CFDAATMA1 | Power Field-Effect Transistor, 31.2A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3/2 | Infineon Technologies AG | TK25N60X vs IPB65R110CFDAATMA1 |
| IPB65R110CFDATMA2 | Power Field-Effect Transistor, TO-263, D2PAK-3 | Infineon Technologies AG | TK25N60X vs IPB65R110CFDATMA2 |
| SP000088490 | Power Field-Effect Transistor, | Infineon Technologies AG | TK25N60X vs SP000088490 |
| TK28N65W5,S1F | Power Field-Effect Transistor | Toshiba America Electronic Components | TK25N60X vs TK28N65W5,S1F |
| SIHH26N60E-T1-GE3 | Power Field-Effect Transistor, 25A I(D), 600V, 0.135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 8 X 8 MM, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK-4 | Vishay Intertechnologies | TK25N60X vs SIHH26N60E-T1-GE3 |
| IPI60R099CPXKSA1 | Power Field-Effect Transistor, 31A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN | Infineon Technologies AG | TK25N60X vs IPI60R099CPXKSA1 |
| STL32N55M5 | 26A, 550V, 0.115ohm, N-CHANNEL, Si, POWER, MOSFET, 8 X 8 MM, ROHS COMPLIANT, POWERFLAT-5 | STMicroelectronics | TK25N60X vs STL32N55M5 |
| IPP60R099CS | Power Field-Effect Transistor, 31A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN | Infineon Technologies AG | TK25N60X vs IPP60R099CS |