Part Details for THMY6432G1EG-80 by Toshiba America Electronic Components
Overview of THMY6432G1EG-80 by Toshiba America Electronic Components
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
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Consumer Electronics
Computing and Data Storage
Part Details for THMY6432G1EG-80
THMY6432G1EG-80 CAD Models
THMY6432G1EG-80 Part Data Attributes
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THMY6432G1EG-80
Toshiba America Electronic Components
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Datasheet
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THMY6432G1EG-80
Toshiba America Electronic Components
IC 32M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168, DIMM-168, Dynamic RAM
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Part Package Code | DIMM | |
| Package Description | DIMM, DIMM168 | |
| Pin Count | 168 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.36 | |
| Access Mode | SINGLE BANK PAGE BURST | |
| Access Time-Max | 6 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 125 MHz | |
| I/O Type | COMMON | |
| JESD-30 Code | R-XDMA-X168 | |
| Memory Density | 2147483648 bit | |
| Memory IC Type | SYNCHRONOUS DRAM MODULE | |
| Memory Width | 64 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 168 | |
| Number of Words | 33554432 words | |
| Number of Words Code | 32000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 32MX64 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | UNSPECIFIED | |
| Package Code | DIMM | |
| Package Equivalence Code | DIMM168 | |
| Package Shape | RECTANGULAR | |
| Package Style | MICROELECTRONIC ASSEMBLY | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 4096 | |
| Self Refresh | YES | |
| Standby Current-Max | 0.016 A | |
| Supply Current-Max | 2.88 mA | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 3 V | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Surface Mount | NO | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Form | UNSPECIFIED | |
| Terminal Pitch | 1.27 mm | |
| Terminal Position | DUAL |
Alternate Parts for THMY6432G1EG-80
This table gives cross-reference parts and alternative options found for THMY6432G1EG-80. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of THMY6432G1EG-80, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IBM11N32645CB-60J | EDO DRAM Module, 32MX64, 60ns, CMOS, DIMM-168 | IBM | THMY6432G1EG-80 vs IBM11N32645CB-60J |
| HYM72V32636AT8-H | Synchronous DRAM Module, 32MX64, 5.4ns, CMOS, DIMM-168 | SK Hynix Inc | THMY6432G1EG-80 vs HYM72V32636AT8-H |
| EBS25UC8APFA-75 | Synchronous DRAM Module, 32MX64, 5.4ns, CMOS, DIMM-168 | Elpida Memory Inc | THMY6432G1EG-80 vs EBS25UC8APFA-75 |
| HYM72V653231LTH-10S | Synchronous DRAM Module, 32MX64, 6ns, CMOS, DIMM-168 | SK Hynix Inc | THMY6432G1EG-80 vs HYM72V653231LTH-10S |
| HYM71V32655ALT8M-S | Synchronous DRAM Module, 32MX64, 6ns, CMOS, DIMM-168 | SK Hynix Inc | THMY6432G1EG-80 vs HYM71V32655ALT8M-S |
| WED3DG6334V10D2 | Synchronous DRAM Module, 32MX64, CMOS, DIMM-168 | Microsemi Corporation | THMY6432G1EG-80 vs WED3DG6334V10D2 |
| MT16LSDT3264AG-10CXX | Synchronous DRAM Module, 32MX64, 6ns, CMOS, | Micron Technology Inc | THMY6432G1EG-80 vs MT16LSDT3264AG-10CXX |
| M366S3253DTS-C1L | Synchronous DRAM Module, 32MX64, 6ns, CMOS, DIMM-168 | Samsung Semiconductor | THMY6432G1EG-80 vs M366S3253DTS-C1L |
| MT8LSDT3264AG-133B1 | Synchronous DRAM Module, 32MX64, 5.4ns, CMOS, MO-161, DIMM-168 | Micron Technology Inc | THMY6432G1EG-80 vs MT8LSDT3264AG-133B1 |
| M366S3253CTS-C7A | Synchronous DRAM Module, 32MX64, 5.4ns, CMOS, DIMM-168 | Samsung Semiconductor | THMY6432G1EG-80 vs M366S3253CTS-C7A |