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N-channel 30 V, 0.0061 Ohm, 65 A, DPAK STripFET(TM) V Power MOSFET
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STD65N3LLH5
STMicroelectronics
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Datasheet
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STD65N3LLH5
STMicroelectronics
N-channel 30 V, 0.0061 Ohm, 65 A, DPAK STripFET(TM) V Power MOSFET
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | STMICROELECTRONICS | |
Part Package Code | TO-252 | |
Package Description | ROHS COMPLIANT, DPAK-3 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | STMicroelectronics | |
Additional Feature | ULTRA-LOW RESISTANCE | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 65 A | |
Drain-source On Resistance-Max | 0.0097 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252 | |
JESD-30 Code | R-PSSO-G2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 50 W | |
Pulsed Drain Current-Max (IDM) | 260 A | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for STD65N3LLH5. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STD65N3LLH5, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
FDB7030BLSS62Z | Power Field-Effect Transistor, 56A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | Fairchild Semiconductor Corporation | STD65N3LLH5 vs FDB7030BLSS62Z |
FDB7030BLSL86Z | Power Field-Effect Transistor, 56A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | Fairchild Semiconductor Corporation | STD65N3LLH5 vs FDB7030BLSL86Z |
ISL9N310AS3STL86Z | Power Field-Effect Transistor, 62A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | Fairchild Semiconductor Corporation | STD65N3LLH5 vs ISL9N310AS3STL86Z |
STD100NH03L | 60A, 30V, 0.0105ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252, DPAK-3 | STMicroelectronics | STD65N3LLH5 vs STD100NH03L |
STB120NH03L | 60A, 30V, 0.0105ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, D2PAK-3 | STMicroelectronics | STD65N3LLH5 vs STB120NH03L |
BUK9M10-30EX | BUK9M10-30E - N-channel 30 V, 10 mΩ logic level MOSFET in LFPAK33@en-us | Nexperia | STD65N3LLH5 vs BUK9M10-30EX |
FDB6644SL86Z | Power Field-Effect Transistor, 55A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | Fairchild Semiconductor Corporation | STD65N3LLH5 vs FDB6644SL86Z |
FDB7030BLSL99Z | Power Field-Effect Transistor, 56A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | Fairchild Semiconductor Corporation | STD65N3LLH5 vs FDB7030BLSL99Z |