Datasheets
STD65N3LLH5 by: STMicroelectronics

N-channel 30 V, 0.0061 Ohm, 65 A, DPAK STripFET(TM) V Power MOSFET

Part Details for STD65N3LLH5 by STMicroelectronics

Overview of STD65N3LLH5 by STMicroelectronics

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Part Details for STD65N3LLH5

STD65N3LLH5 CAD Models

STD65N3LLH5 Part Data Attributes

STD65N3LLH5 STMicroelectronics
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STD65N3LLH5 STMicroelectronics N-channel 30 V, 0.0061 Ohm, 65 A, DPAK STripFET(TM) V Power MOSFET
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer STMICROELECTRONICS
Part Package Code TO-252
Package Description ROHS COMPLIANT, DPAK-3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer STMicroelectronics
Additional Feature ULTRA-LOW RESISTANCE
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 65 A
Drain-source On Resistance-Max 0.0097 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 50 W
Pulsed Drain Current-Max (IDM) 260 A
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for STD65N3LLH5

This table gives cross-reference parts and alternative options found for STD65N3LLH5. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STD65N3LLH5, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FDB7030BLSS62Z Power Field-Effect Transistor, 56A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB Fairchild Semiconductor Corporation STD65N3LLH5 vs FDB7030BLSS62Z
FDB7030BLSL86Z Power Field-Effect Transistor, 56A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 Fairchild Semiconductor Corporation STD65N3LLH5 vs FDB7030BLSL86Z
ISL9N310AS3STL86Z Power Field-Effect Transistor, 62A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB Fairchild Semiconductor Corporation STD65N3LLH5 vs ISL9N310AS3STL86Z
STD100NH03L 60A, 30V, 0.0105ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252, DPAK-3 STMicroelectronics STD65N3LLH5 vs STD100NH03L
STB120NH03L 60A, 30V, 0.0105ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, D2PAK-3 STMicroelectronics STD65N3LLH5 vs STB120NH03L
BUK9M10-30EX BUK9M10-30E - N-channel 30 V, 10 mΩ logic level MOSFET in LFPAK33@en-us Nexperia STD65N3LLH5 vs BUK9M10-30EX
FDB6644SL86Z Power Field-Effect Transistor, 55A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 Fairchild Semiconductor Corporation STD65N3LLH5 vs FDB6644SL86Z
FDB7030BLSL99Z Power Field-Effect Transistor, 56A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB Fairchild Semiconductor Corporation STD65N3LLH5 vs FDB7030BLSL99Z

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