Part Details for FDB6644SL86Z by Fairchild Semiconductor Corporation
Overview of FDB6644SL86Z by Fairchild Semiconductor Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (8 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Renewable Energy
Automotive
Part Details for FDB6644SL86Z
FDB6644SL86Z CAD Models
FDB6644SL86Z Part Data Attributes
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FDB6644SL86Z
Fairchild Semiconductor Corporation
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Datasheet
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FDB6644SL86Z
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 55A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | D2PAK | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 55 A | |
| Drain-source On Resistance-Max | 0.01 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 125 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 150 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FDB6644SL86Z
This table gives cross-reference parts and alternative options found for FDB6644SL86Z. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDB6644SL86Z, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FDB7030BLSS62Z | Power Field-Effect Transistor, 56A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | Fairchild Semiconductor Corporation | FDB6644SL86Z vs FDB7030BLSS62Z |
| FDB7030BLSL86Z | Power Field-Effect Transistor, 56A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | Fairchild Semiconductor Corporation | FDB6644SL86Z vs FDB7030BLSL86Z |
| ISL9N310AS3STL86Z | Power Field-Effect Transistor, 62A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | Fairchild Semiconductor Corporation | FDB6644SL86Z vs ISL9N310AS3STL86Z |
| STD100NH03L | 60A, 30V, 0.0105ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252, DPAK-3 | STMicroelectronics | FDB6644SL86Z vs STD100NH03L |
| STD65N3LLH5 | N-channel 30 V, 0.0061 Ohm, 65 A, DPAK STripFET(TM) V Power MOSFET | STMicroelectronics | FDB6644SL86Z vs STD65N3LLH5 |
| STB120NH03L | 60A, 30V, 0.0105ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, D2PAK-3 | STMicroelectronics | FDB6644SL86Z vs STB120NH03L |
| BUK9M10-30EX | BUK9M10-30E - N-channel 30 V, 10 mΩ logic level MOSFET in LFPAK33@en-us | Nexperia | FDB6644SL86Z vs BUK9M10-30EX |
| FDB7030BLSL99Z | Power Field-Effect Transistor, 56A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | Fairchild Semiconductor Corporation | FDB6644SL86Z vs FDB7030BLSL99Z |