Datasheets
SSM5H10TU by: Toshiba America Electronic Components

TRANSISTOR 1600 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, 2-2R1A, UFV, 5 PIN, FET General Purpose Small Signal

Part Details for SSM5H10TU by Toshiba America Electronic Components

Overview of SSM5H10TU by Toshiba America Electronic Components

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Applications Education and Research Internet of Things (IoT) Computing and Data Storage Aerospace and Defense Healthcare Telecommunications Automotive

Part Details for SSM5H10TU

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SSM5H10TU Part Data Attributes

SSM5H10TU Toshiba America Electronic Components
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SSM5H10TU Toshiba America Electronic Components TRANSISTOR 1600 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, 2-2R1A, UFV, 5 PIN, FET General Purpose Small Signal
Part Life Cycle Code End Of Life
Ihs Manufacturer TOSHIBA CORP
Package Description SMALL OUTLINE, R-PDSO-F5
Pin Count 5
Reach Compliance Code unknown
ECCN Code EAR99
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 1.6 A
Drain-source On Resistance-Max 0.139 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F5
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 125 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SSM5H10TU

This table gives cross-reference parts and alternative options found for SSM5H10TU. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SSM5H10TU, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
NDS335NS62Z Small Signal Field-Effect Transistor, 1.7A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3 Fairchild Semiconductor Corporation SSM5H10TU vs NDS335NS62Z
NDS335N/S62Z 1700mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB Texas Instruments SSM5H10TU vs NDS335N/S62Z
FDN335ND87Z Small Signal Field-Effect Transistor, 1.7A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3 Fairchild Semiconductor Corporation SSM5H10TU vs FDN335ND87Z
BSS214NWL6327HTMA1 Small Signal Field-Effect Transistor, 1.5A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG SSM5H10TU vs BSS214NWL6327HTMA1
BSS214NWH6327 Small Signal Field-Effect Transistor, 1.5A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG SSM5H10TU vs BSS214NWH6327
NDS335N/L99Z 1700mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB Texas Instruments SSM5H10TU vs NDS335N/L99Z
BSS214NH6327XTSA1 Small Signal Field-Effect Transistor, 1.5A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG SSM5H10TU vs BSS214NH6327XTSA1
BSD214SNH6327XTSA1 Small Signal Field-Effect Transistor, 1.5A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-6 Infineon Technologies AG SSM5H10TU vs BSD214SNH6327XTSA1
NDS335N Small Signal Field-Effect Transistor, 1.7A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3 Fairchild Semiconductor Corporation SSM5H10TU vs NDS335N
FDN335N_NL Small Signal Field-Effect Transistor, 1.7A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3 Fairchild Semiconductor Corporation SSM5H10TU vs FDN335N_NL

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