Datasheets
SSH7N90 by:

Power Field-Effect Transistor, 7A I(D), 900V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN

Part Details for SSH7N90 by Samsung Semiconductor

Overview of SSH7N90 by Samsung Semiconductor

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Applications Education and Research Internet of Things (IoT) Computing and Data Storage Aerospace and Defense Healthcare Telecommunications Automotive

Part Details for SSH7N90

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SSH7N90 Part Data Attributes:

SSH7N90 Samsung Semiconductor
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SSH7N90 Samsung Semiconductor Power Field-Effect Transistor, 7A I(D), 900V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
Part Life Cycle Code Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC
Part Package Code TO-3P
Package Description TO-3P, 3 PIN
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Configuration SINGLE
DS Breakdown Voltage-Min 900 V
Drain Current-Max (ID) 7 A
Drain-source On Resistance-Max 1.8 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 190 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Element Material SILICON

Alternate Parts for SSH7N90

This table gives cross-reference parts and alternative options found for SSH7N90. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SSH7N90, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
STW6NA90 6A, 900V, 1.9ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 STMicroelectronics SSH7N90 vs STW6NA90
Part Number Description Manufacturer Compare
RFP8P05 Power Field-Effect Transistor, 8A I(D), 50V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Fairchild Semiconductor Corporation SSH7N90 vs RFP8P05
RFP15N08L Power Field-Effect Transistor, 15A I(D), 80V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor SSH7N90 vs RFP15N08L
RFG50N06LE Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 Harris Semiconductor SSH7N90 vs RFG50N06LE
RFP14N06L Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, Fairchild Semiconductor Corporation SSH7N90 vs RFP14N06L
STP3NA60FI 2.1A, 600V, 4ohm, N-CHANNEL, Si, POWER, MOSFET, ISOWATT220, 3 PIN STMicroelectronics SSH7N90 vs STP3NA60FI
RFP50N06LE Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor SSH7N90 vs RFP50N06LE
RFP14N06L Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor SSH7N90 vs RFP14N06L
RFP15P05 Power Field-Effect Transistor, 15A I(D), 50V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor SSH7N90 vs RFP15P05
RFP15P06 Power Field-Effect Transistor, 15A I(D), 60V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, Fairchild Semiconductor Corporation SSH7N90 vs RFP15P06
RFP70N06 N-Channel Power MOSFET 60V, 70A, 14mΩ, 800-TUBE onsemi SSH7N90 vs RFP70N06

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