Part Details for SQJ840EP-T1_GE3 by Vishay Intertechnologies
Overview of SQJ840EP-T1_GE3 by Vishay Intertechnologies
- Distributor Offerings: (11 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SQJ840EP-T1_GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
26AK5827
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Newark | Mosfet, N-Ch, 30V, 30A, Powerpak So Rohs Compliant: Yes |Vishay SQJ840EP-T1_GE3 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 46 |
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$1.1200 / $1.7500 | Buy Now |
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DISTI #
76Y1542
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Newark | |Vishay SQJ840EP-T1_GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.6620 / $0.7910 | Buy Now |
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DISTI #
SQJ840EP-T1_GE3
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Avnet Americas | Trans MOSFET N-CH 30V 30A 5-Pin(4+Tab) PowerPAK SO T/R - Tape and Reel (Alt: SQJ840EP-T1_GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 25 Weeks, 0 Days Container: Reel | 0 |
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$0.6979 / $0.8867 | Buy Now |
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DISTI #
SQJ840EP-T1-GE3
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Avnet Americas | Trans MOSFET N-CH 30V 30A 5-Pin(4+Tab) PowerPAK SO T/R - Tape and Reel (Alt: SQJ840EP-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0 |
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RFQ | |
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DISTI #
78-SQJ840EP-T1_GE3
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Mouser Electronics | MOSFET 30V 30A 46W AEC-Q101 Qualified RoHS: Compliant | 0 |
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$0.6950 / $1.5400 | Order Now |
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Future Electronics | Single N-Channel 30 V 9.3 mOhm 46 W SMT Automotive Power Mosfet - PowerPAK SO-8L RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
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$0.6800 | Buy Now |
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Future Electronics | Single N-Channel 30 V 9.3 mOhm 46 W SMT Automotive Power Mosfet - PowerPAK SO-8L RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 25 Weeks Container: Reel | 0Reel |
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$0.6800 | Buy Now |
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Bristol Electronics | 2990 |
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RFQ | ||
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Quest Components | 2392 |
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$0.7755 / $2.0680 | Buy Now | |
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Chip1Cloud | MOSFET N-CH 30V 30A PPAK SO-8 | 51100 |
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RFQ |
Part Details for SQJ840EP-T1_GE3
SQJ840EP-T1_GE3 CAD Models
SQJ840EP-T1_GE3 Part Data Attributes
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SQJ840EP-T1_GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SQJ840EP-T1_GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 30A I(D), 30V, 0.0093ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SO-8L, 4 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | SMALL OUTLINE, R-PSSO-G4 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 26 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 30 A | |
| Drain-source On Resistance-Max | 0.0093 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 120 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Element Material | SILICON |
Alternate Parts for SQJ840EP-T1_GE3
This table gives cross-reference parts and alternative options found for SQJ840EP-T1_GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SQJ840EP-T1_GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| RJK03B7DPA-00#J5A | N Channel Power MOSFET, WPAK(3F), /Embossed Tape | Renesas Electronics Corporation | SQJ840EP-T1_GE3 vs RJK03B7DPA-00#J5A |
| IRFU3707Z | Power Field-Effect Transistor, 30A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, PLASTIC, IPAK-3 | Infineon Technologies AG | SQJ840EP-T1_GE3 vs IRFU3707Z |
| IRLR7821HR | Power Field-Effect Transistor, 30A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | International Rectifier | SQJ840EP-T1_GE3 vs IRLR7821HR |
| IRFR3707Z | Power Field-Effect Transistor, 30A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | Infineon Technologies AG | SQJ840EP-T1_GE3 vs IRFR3707Z |
| RJK03B7DPA-00-J5A | 30A, 30V, 0.0107ohm, N-CHANNEL, Si, POWER, MOSFET, HALOFEN AND LEAD FREE, WPAK(3F), 8 PIN | Renesas Electronics Corporation | SQJ840EP-T1_GE3 vs RJK03B7DPA-00-J5A |
| SPD30N03S2L07GBTMA1 | Power Field-Effect Transistor, 30A I(D), 30V, 0.0098ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2 | Infineon Technologies AG | SQJ840EP-T1_GE3 vs SPD30N03S2L07GBTMA1 |