Part Details for RJK03B7DPA-00#J5A by Renesas Electronics Corporation
Overview of RJK03B7DPA-00#J5A by Renesas Electronics Corporation
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| RJK03B7DPA-00#J5A | Renesas Electronics Corporation | N Channel Power MOSFET, WPAK(3F), /Embossed Tape | |
| RJK03B7DPA-00#J53 | Renesas Electronics Corporation | N Channel Power MOSFET |
Price & Stock for RJK03B7DPA-00#J5A
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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Bristol Electronics | 489 |
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RFQ | ||
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Rochester Electronics | Power Field-Effect Transistor, 30A, 30V, N-Channel MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 6000 |
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$0.4533 / $0.5333 | Buy Now |
Part Details for RJK03B7DPA-00#J5A
RJK03B7DPA-00#J5A CAD Models
RJK03B7DPA-00#J5A Part Data Attributes
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RJK03B7DPA-00#J5A
Renesas Electronics Corporation
Buy Now
Datasheet
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Compare Parts:
RJK03B7DPA-00#J5A
Renesas Electronics Corporation
N Channel Power MOSFET, WPAK(3F), /Embossed Tape
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | RENESAS ELECTRONICS CORP | |
| Part Package Code | WPAK(3F) | |
| Package Description | HALOFEN AND LEAD FREE, WPAK(3F), 8 PIN | |
| Pin Count | 8 | |
| Manufacturer Package Code | PWSN0008DC | |
| Reach Compliance Code | unknown | |
| ECCN Code | 5A002 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | Renesas Electronics | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 30 A | |
| Drain-source On Resistance-Max | 0.0107 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-N5 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 120 A | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for RJK03B7DPA-00#J5A
This table gives cross-reference parts and alternative options found for RJK03B7DPA-00#J5A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RJK03B7DPA-00#J5A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFU3707Z | Power Field-Effect Transistor, 30A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, PLASTIC, IPAK-3 | Infineon Technologies AG | RJK03B7DPA-00#J5A vs IRFU3707Z |
| RJK03B7DPA-00-J5A | 30A, 30V, 0.0107ohm, N-CHANNEL, Si, POWER, MOSFET, HALOFEN AND LEAD FREE, WPAK(3F), 8 PIN | Renesas Electronics Corporation | RJK03B7DPA-00#J5A vs RJK03B7DPA-00-J5A |
| IRLR7821HR | Power Field-Effect Transistor, 30A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | International Rectifier | RJK03B7DPA-00#J5A vs IRLR7821HR |
| SPD30N03S2L07GBTMA1 | Power Field-Effect Transistor, 30A I(D), 30V, 0.0098ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2 | Infineon Technologies AG | RJK03B7DPA-00#J5A vs SPD30N03S2L07GBTMA1 |
| IRFR3707Z | Power Field-Effect Transistor, 30A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | Infineon Technologies AG | RJK03B7DPA-00#J5A vs IRFR3707Z |