Part Details for SPD08N50C3ATMA1 by Infineon Technologies AG
Overview of SPD08N50C3ATMA1 by Infineon Technologies AG
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (4 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SPD08N50C3ATMA1
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SPD08N50C3ATMA1CT-ND
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DigiKey | MOSFET N-CH 500V 7.6A TO252-3 Min Qty: 1 Lead time: 15 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
12144 In Stock |
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$0.8322 / $1.9200 | Buy Now |
DISTI #
SPD08N50C3ATMA1
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Avnet Americas | Trans MOSFET N-CH 500V 7.6A 3-Pin TO-252 T/R - Tape and Reel (Alt: SPD08N50C3ATMA1) RoHS: Not Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 15 Weeks, 0 Days Container: Reel | 0 |
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$0.8512 / $1.0403 | Buy Now |
DISTI #
726-SPD08N50C3ATMA1
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Mouser Electronics | MOSFET LOW POWER_LEGACY RoHS: Compliant | 2970 |
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$0.8270 / $1.5200 | Buy Now |
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Future Electronics | N-Channel 500 V 600 mOhm 32 nC CoolMOS™ Power Mosfet - PG-TO252-3-1 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0Reel |
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$0.8100 | Buy Now |
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Rochester Electronics | SPD08N50 - 500V CoolMOS N-Channel Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 | 25000 |
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$0.7979 / $0.9387 | Buy Now |
DISTI #
SP001117776
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EBV Elektronik | Trans MOSFET N-CH 500V 7.6A 3-Pin TO-252 T/R (Alt: SP001117776) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 16 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for SPD08N50C3ATMA1
SPD08N50C3ATMA1 CAD Models
SPD08N50C3ATMA1 Part Data Attributes:
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SPD08N50C3ATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
SPD08N50C3ATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 7.6A I(D), 500V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, DPAK-3
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Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | GREEN, PLASTIC, TO-252, DPAK-3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 15 Weeks | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED, HIGH VOLTAGE | |
Avalanche Energy Rating (Eas) | 230 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 7.6 A | |
Drain-source On Resistance-Max | 0.6 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252AA | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 22.8 A | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for SPD08N50C3ATMA1
This table gives cross-reference parts and alternative options found for SPD08N50C3ATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPD08N50C3ATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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SPD08N50C3 | 7.6A, 500V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, GREEN, PLASTIC, TO-252, DPAK-3 | Rochester Electronics LLC | SPD08N50C3ATMA1 vs SPD08N50C3 |
SPD08N50C3 | Power Field-Effect Transistor, 7.6A I(D), 500V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, DPAK-3 | Infineon Technologies AG | SPD08N50C3ATMA1 vs SPD08N50C3 |
SPD08N50C3BT | Power Field-Effect Transistor | Infineon Technologies AG | SPD08N50C3ATMA1 vs SPD08N50C3BT |
SPD08N50C3AT | Power Field-Effect Transistor | Infineon Technologies AG | SPD08N50C3ATMA1 vs SPD08N50C3AT |