Datasheets
SPA07N60CFDXKSA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 6.6A I(D), 600V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220FP, 3 PIN

Part Details for SPA07N60CFDXKSA1 by Infineon Technologies AG

Overview of SPA07N60CFDXKSA1 by Infineon Technologies AG

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for SPA07N60CFDXKSA1

Part # Distributor Description Stock Price Buy
Rochester Electronics SPA07N60 - 600V CoolMOS N-Channel Power MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 696
  • 1 $1.2200
  • 25 $1.1900
  • 100 $1.1400
  • 500 $1.1000
  • 1,000 $1.0300
$1.0300 / $1.2200 Buy Now

Part Details for SPA07N60CFDXKSA1

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SPA07N60CFDXKSA1 Part Data Attributes

SPA07N60CFDXKSA1 Infineon Technologies AG
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SPA07N60CFDXKSA1 Infineon Technologies AG Power Field-Effect Transistor, 6.6A I(D), 600V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220FP, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code TO-220AB
Package Description PLASTIC, TO-220FP, 3 PIN
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 230 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 6.6 A
Drain-source On Resistance-Max 0.7 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 17 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SPA07N60CFDXKSA1

This table gives cross-reference parts and alternative options found for SPA07N60CFDXKSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPA07N60CFDXKSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SPA07N65C3 Power Field-Effect Transistor, 7.3A I(D), 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, FULLPAK-3 Infineon Technologies AG SPA07N60CFDXKSA1 vs SPA07N65C3
STF14NM50N N-channel 500 V, 0.28 Ohm, 12 A MDmesh(TM) II Power MOSFET in TO-220FP package STMicroelectronics SPA07N60CFDXKSA1 vs STF14NM50N
STF8NM60ND N-channel 600 V, 0.59 Ω, 7 A, FDmesh͐2;2; II Power MOSFET TO-220, TO-220FP, IPAK, DPAK STMicroelectronics SPA07N60CFDXKSA1 vs STF8NM60ND
STF12N65M5 N-channel 650 V, 0.39 Ohm typ., 8.5 A MDmesh M5 Power MOSFET in TO-220FP package STMicroelectronics SPA07N60CFDXKSA1 vs STF12N65M5
STF18NM80 N-channel 800 V, 0.25 Ohm, 17 A, MDmesh(TM) Power MOSFET in TO-220FP package STMicroelectronics SPA07N60CFDXKSA1 vs STF18NM80
STF21N65M5 N-channel 650 V, 0.150 Ohm typ., 17 A MDmesh M5 Power MOSFET in TO-220FP package STMicroelectronics SPA07N60CFDXKSA1 vs STF21N65M5
FCPF7N60YDTU Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 7 A, 600 mΩ, TO-220F, 800-TUBE onsemi SPA07N60CFDXKSA1 vs FCPF7N60YDTU
STF12N50U 10A, 500V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220FP, 3 PIN STMicroelectronics SPA07N60CFDXKSA1 vs STF12N50U
SPA07N60CFD Power Field-Effect Transistor, 6.6A I(D), 600V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220FP, 3 PIN Infineon Technologies AG SPA07N60CFDXKSA1 vs SPA07N60CFD
LSD07N70 Power Field-Effect Transistor, 7A I(D), 700V, 0.57ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN Xi’an Lonten Renewable Energy Technology Inc SPA07N60CFDXKSA1 vs LSD07N70

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