There are no models available for this part yet.
Overview of SP001563324 by Infineon Technologies AG
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 1 listing )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 7 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Consumer Electronics
Renewable Energy
Price & Stock for SP001563324 by Infineon Technologies AG
Part # | Manufacturer | Description | Stock | Price | Buy | ||
---|---|---|---|---|---|---|---|
DISTI #
SP001563324
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EBV Elektronik | Trans MOSFET N-CH 100V 33A 3-Pin(2+Tab) D2PAK T/R (Alt: SP001563324) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 11 Weeks, 0 Days | EBV - 0 |
|
Buy Now |
CAD Models for SP001563324 by Infineon Technologies AG
Part Data Attributes for SP001563324 by Infineon Technologies AG
|
|
---|---|
Part Life Cycle Code
|
Active
|
Ihs Manufacturer
|
INFINEON TECHNOLOGIES AG
|
Package Description
|
D2PAK-3/2
|
Reach Compliance Code
|
compliant
|
ECCN Code
|
EAR99
|
Additional Feature
|
AVALANCHE RATED, ULTRA-LOW RESISTANCE
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Avalanche Energy Rating (Eas)
|
185 mJ
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Case Connection
|
DRAIN
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Configuration
|
SINGLE WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min
|
100 V
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Drain Current-Max (ID)
|
33 A
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Drain-source On Resistance-Max
|
0.044 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
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JESD-30 Code
|
R-PSSO-G2
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Number of Elements
|
1
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Number of Terminals
|
2
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Operating Mode
|
ENHANCEMENT MODE
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Operating Temperature-Min
|
-55 °C
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Package Body Material
|
PLASTIC/EPOXY
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Package Shape
|
RECTANGULAR
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Package Style
|
SMALL OUTLINE
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Polarity/Channel Type
|
N-CHANNEL
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Pulsed Drain Current-Max (IDM)
|
110 A
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Surface Mount
|
YES
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Terminal Form
|
GULL WING
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Terminal Position
|
SINGLE
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Transistor Application
|
SWITCHING
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Transistor Element Material
|
SILICON
|
Alternate Parts for SP001563324
This table gives cross-reference parts and alternative options found for SP001563324. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SP001563324, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRF540NHR | Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | International Rectifier | SP001563324 vs IRF540NHR |
IRF540NSTRLHR | Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3/2 | International Rectifier | SP001563324 vs IRF540NSTRLHR |
934055808127 | TRANSISTOR 35 A, 100 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN, FET General Purpose Power | NXP Semiconductors | SP001563324 vs 934055808127 |
IPD30N10S3L-34 | Power Field-Effect Transistor, 30A I(D), 100V, 0.0418ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AB, GREEN, PLASTIC, TO-252, 3 PIN | Infineon Technologies AG | SP001563324 vs IPD30N10S3L-34 |
HUF75631S3S | 33A, 100V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | Intersil Corporation | SP001563324 vs HUF75631S3S |
IRF540NSHR | Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3/2 | International Rectifier | SP001563324 vs IRF540NSHR |
IPD30N10S3L34ATMA1 | Power Field-Effect Transistor, 30A I(D), 100V, 0.0418ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2 | Infineon Technologies AG | SP001563324 vs IPD30N10S3L34ATMA1 |