Part Details for SP000443926 by Infineon Technologies AG
Overview of SP000443926 by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
Automotive
Price & Stock for SP000443926
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SP000443926
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EBV Elektronik | Power MOSFET, P Channel, 60 V, 18.6 A, 0.1 ohm, TO-252 (DPAK), Surface Mount (Alt: SP000443926) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 21 Weeks, 0 Days | EBV - 107500 |
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Part Details for SP000443926
SP000443926 CAD Models
SP000443926 Part Data Attributes
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SP000443926
Infineon Technologies AG
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Datasheet
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Compare Parts:
SP000443926
Infineon Technologies AG
18.6A, 60V, 0.13ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252,
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 150 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 18.6 A | |
Drain-source On Resistance-Max | 0.13 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252 | |
JESD-30 Code | R-PSSO-G2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | P-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 74.4 A | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Element Material | SILICON |
Alternate Parts for SP000443926
This table gives cross-reference parts and alternative options found for SP000443926. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SP000443926, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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SPP18P06PHXK | Power Field-Effect Transistor, 18.7A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | SP000443926 vs SPP18P06PHXK |
SPP18P06PHXKSA1 | Power Field-Effect Transistor, 18.7A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | SP000443926 vs SPP18P06PHXKSA1 |
SPD18P06PGXT | Power Field-Effect Transistor, 18.6A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AB, GREEN, PLASTIC, TO-252, 3 PIN | Infineon Technologies AG | SP000443926 vs SPD18P06PGXT |
SPD18P06PGBT | Power Field-Effect Transistor, 18.6A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AB, GREEN, PLASTIC, TO-252, 3 PIN | Infineon Technologies AG | SP000443926 vs SPD18P06PGBT |
SFI9Z34TU | Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3 | Fairchild Semiconductor Corporation | SP000443926 vs SFI9Z34TU |