Part Details for SP000261248 by Infineon Technologies AG
Overview of SP000261248 by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Computing and Data Storage
Energy and Power Systems
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Renewable Energy
Electronic Manufacturing
Automotive
Part Details for SP000261248
SP000261248 CAD Models
SP000261248 Part Data Attributes:
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SP000261248
Infineon Technologies AG
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Datasheet
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SP000261248
Infineon Technologies AG
Power Field-Effect Transistor, 30A I(D), 100V, 0.0418ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252-3-11, 3/2 PIN
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | TO-252-3-11, 3/2 PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 138 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 30 A | |
| Drain-source On Resistance-Max | 0.0418 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 68 pF | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 57 W | |
| Pulsed Drain Current-Max (IDM) | 120 A | |
| Reference Standard | AEC-Q101; IEC-68-1 | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Element Material | SILICON |
Alternate Parts for SP000261248
This table gives cross-reference parts and alternative options found for SP000261248. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SP000261248, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| 2SK3647-01 | Power Field-Effect Transistor, 30A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TFP, 4 PIN | Fuji Electric Co Ltd | SP000261248 vs 2SK3647-01 |
| 934055808127 | TRANSISTOR 35 A, 100 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN, FET General Purpose Power | NXP Semiconductors | SP000261248 vs 934055808127 |
| HUF75631S3S | 33A, 100V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | Intersil Corporation | SP000261248 vs HUF75631S3S |
| IRF540NSHR | Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3/2 | International Rectifier | SP000261248 vs IRF540NSHR |
| NTE2930 | Power Field-Effect Transistor, 31A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | NTE Electronics Inc | SP000261248 vs NTE2930 |