Part Details for SIPC14N60S5 by Infineon Technologies AG
Overview of SIPC14N60S5 by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for SIPC14N60S5
SIPC14N60S5 CAD Models
SIPC14N60S5 Part Data Attributes:
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SIPC14N60S5
Infineon Technologies AG
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Datasheet
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SIPC14N60S5
Infineon Technologies AG
Power Field-Effect Transistor, 11A I(D), 600V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-2
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | DIE | |
Package Description | UNCASED CHIP, R-XUUC-N2 | |
Pin Count | 2 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 11 A | |
Drain-source On Resistance-Max | 0.45 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-XUUC-N2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | UNCASED CHIP | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 22 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | NO LEAD | |
Terminal Position | UPPER | |
Transistor Element Material | SILICON |
Alternate Parts for SIPC14N60S5
This table gives cross-reference parts and alternative options found for SIPC14N60S5. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIPC14N60S5, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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STB11NM60N | 10A, 600V, 0.45ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 | STMicroelectronics | SIPC14N60S5 vs STB11NM60N |
STB11NM60T4 | N-channel 600 V, 0.4 Ohm typ., 11 A MDmesh Power MOSFET in a D2PAK package | STMicroelectronics | SIPC14N60S5 vs STB11NM60T4 |
STD11NM60ND | N-channel 600 V, 0.37 Ohm typ., 10 A FDmesh II Power MOSFET in DPAK package | STMicroelectronics | SIPC14N60S5 vs STD11NM60ND |
STP11NM60Z | 11A, 600V, 0.45ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN | STMicroelectronics | SIPC14N60S5 vs STP11NM60Z |
STP11NM60FD | N-channel 600 V, 0.38 Ohm typ., 11 A MDmesh Power MOSFET in TO-220 package | STMicroelectronics | SIPC14N60S5 vs STP11NM60FD |
STB11NM60A-1 | 11A, 600V, 0.45ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, TO-262, I2PAK-3 | STMicroelectronics | SIPC14N60S5 vs STB11NM60A-1 |
STI11NM60ND | 10A, 600V, 0.45ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3 | STMicroelectronics | SIPC14N60S5 vs STI11NM60ND |
SIPC14N60C2 | Power Field-Effect Transistor, 11A I(D), 600V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-2 | Infineon Technologies AG | SIPC14N60S5 vs SIPC14N60C2 |
STB11NM60ZT4 | 11A, 600V, 0.45ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, D2PAK-3 | STMicroelectronics | SIPC14N60S5 vs STB11NM60ZT4 |
SPP11N60CFDXKSA1 | Power Field-Effect Transistor, 11A I(D), 600V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | SIPC14N60S5 vs SPP11N60CFDXKSA1 |