Datasheets
SIPC14N60S5 by: Infineon Technologies AG

Power Field-Effect Transistor, 11A I(D), 600V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-2

Part Details for SIPC14N60S5 by Infineon Technologies AG

Overview of SIPC14N60S5 by Infineon Technologies AG

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Part Details for SIPC14N60S5

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SIPC14N60S5 Part Data Attributes:

SIPC14N60S5 Infineon Technologies AG
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SIPC14N60S5 Infineon Technologies AG Power Field-Effect Transistor, 11A I(D), 600V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-2
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code DIE
Package Description UNCASED CHIP, R-XUUC-N2
Pin Count 2
Reach Compliance Code unknown
ECCN Code EAR99
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 11 A
Drain-source On Resistance-Max 0.45 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-XUUC-N2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style UNCASED CHIP
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 22 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Form NO LEAD
Terminal Position UPPER
Transistor Element Material SILICON

Alternate Parts for SIPC14N60S5

This table gives cross-reference parts and alternative options found for SIPC14N60S5. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIPC14N60S5, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
STB11NM60N 10A, 600V, 0.45ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 STMicroelectronics SIPC14N60S5 vs STB11NM60N
STB11NM60T4 N-channel 600 V, 0.4 Ohm typ., 11 A MDmesh Power MOSFET in a D2PAK package STMicroelectronics SIPC14N60S5 vs STB11NM60T4
STD11NM60ND N-channel 600 V, 0.37 Ohm typ., 10 A FDmesh II Power MOSFET in DPAK package STMicroelectronics SIPC14N60S5 vs STD11NM60ND
STP11NM60Z 11A, 600V, 0.45ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN STMicroelectronics SIPC14N60S5 vs STP11NM60Z
STP11NM60FD N-channel 600 V, 0.38 Ohm typ., 11 A MDmesh Power MOSFET in TO-220 package STMicroelectronics SIPC14N60S5 vs STP11NM60FD
STB11NM60A-1 11A, 600V, 0.45ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, TO-262, I2PAK-3 STMicroelectronics SIPC14N60S5 vs STB11NM60A-1
STI11NM60ND 10A, 600V, 0.45ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3 STMicroelectronics SIPC14N60S5 vs STI11NM60ND
SIPC14N60C2 Power Field-Effect Transistor, 11A I(D), 600V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-2 Infineon Technologies AG SIPC14N60S5 vs SIPC14N60C2
STB11NM60ZT4 11A, 600V, 0.45ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, D2PAK-3 STMicroelectronics SIPC14N60S5 vs STB11NM60ZT4
SPP11N60CFDXKSA1 Power Field-Effect Transistor, 11A I(D), 600V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG SIPC14N60S5 vs SPP11N60CFDXKSA1

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