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Part Details for SI6423DQ-T1-E3 by Vishay Siliconix
Overview of SI6423DQ-T1-E3 by Vishay Siliconix
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SI6423DQ-T1-E3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SI6423DQ-T1-E3CT-ND
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DigiKey | MOSFET P-CH 12V 8.2A 8TSSOP Min Qty: 1 Lead time: 11 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) | Temporarily Out of Stock |
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$0.7125 / $1.7000 | Buy Now |
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Quest Components | 8200 mA, 12 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET | 4 |
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$1.6733 / $1.8188 | Buy Now |
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New Advantage Corporation | Single P-Channel 12 V 8.5 mOhm Surface Mount TrenchFET Power Mosfet - TSSOP-8 RoHS: Compliant Min Qty: 1 Package Multiple: 3000 | 24000 |
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$0.8200 / $0.8786 | Buy Now |
Part Details for SI6423DQ-T1-E3
SI6423DQ-T1-E3 CAD Models
SI6423DQ-T1-E3 Part Data Attributes
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SI6423DQ-T1-E3
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
SI6423DQ-T1-E3
Vishay Siliconix
Trans MOSFET P-CH 12V 8.2A 8-Pin TSSOP T/R
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Part Package Code | TSSOP | |
| Package Description | SMALL OUTLINE, R-PDSO-G8 | |
| Pin Count | 8 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Vishay | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 12 V | |
| Drain Current-Max (ID) | 8.2 A | |
| Drain-source On Resistance-Max | 0.0085 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 1.5 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SI6423DQ-T1-E3
This table gives cross-reference parts and alternative options found for SI6423DQ-T1-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI6423DQ-T1-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| STS10PF30L | 10mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SO-8 | STMicroelectronics | SI6423DQ-T1-E3 vs STS10PF30L |
| FDS6679 | Small Signal Field-Effect Transistor, 13A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 | Fairchild Semiconductor Corporation | SI6423DQ-T1-E3 vs FDS6679 |
| FDS9435AL99Z | Small Signal Field-Effect Transistor, 5.3A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | Fairchild Semiconductor Corporation | SI6423DQ-T1-E3 vs FDS9435AL99Z |
| FDS6679F011 | Small Signal Field-Effect Transistor, 13A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 | Fairchild Semiconductor Corporation | SI6423DQ-T1-E3 vs FDS6679F011 |
| NDS8435AD84Z | Small Signal Field-Effect Transistor, 7.9A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Fairchild Semiconductor Corporation | SI6423DQ-T1-E3 vs NDS8435AD84Z |
| FDS6575 | Small Signal Field-Effect Transistor, 10A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Fairchild Semiconductor Corporation | SI6423DQ-T1-E3 vs FDS6575 |
| NDS9400A/S62Z | 3400mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET | Texas Instruments | SI6423DQ-T1-E3 vs NDS9400A/S62Z |
| FDS4435BZ | Small Signal Field-Effect Transistor, 8.8A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8 | Fairchild Semiconductor Corporation | SI6423DQ-T1-E3 vs FDS4435BZ |
| TPS1100DR | Single P-channel Enhancement-Mode MOSFET 8-SOIC | Texas Instruments | SI6423DQ-T1-E3 vs TPS1100DR |
| FDR844P | Small Signal Field-Effect Transistor, 10A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-8 | Fairchild Semiconductor Corporation | SI6423DQ-T1-E3 vs FDR844P |