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Transistors / Small Signal Field-Effect Transistors / SI4164DY-T1-GE3
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SI4164DY-T1-GE3 by:

Small Signal Field-Effect Transistor, 30A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOP-8

Part Details for SI4164DY-T1-GE3 by Vishay Intertechnologies

Overview of SI4164DY-T1-GE3 by Vishay Intertechnologies

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Applications Energy and Power Systems Renewable Energy

Price & Stock for SI4164DY-T1-GE3

Part # Distributor Description Stock Price Buy
DISTI # 97W2646
Newark Mosfet Transistor, N Channel, 30 A, 30 V, 0.0026 Ohm, 10 V, 2.5 V Rohs Compliant: Yes |Vishay SI4164DY-T1-GE3 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 1276
  • 1 $1.7400
  • 10 $1.4600
  • 25 $1.3500
  • 50 $1.2500
  • 100 $1.1500
  • 500 $0.9960
$0.9960 / $1.7400 Buy Now
DISTI # 16P3728
Newark N Channel Mosfet, 30V, 30A, Soic, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:30A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:20V, Gate Source Threshold Voltage Max:2.5V Rohs Compliant: Yes |Vishay SI4164DY-T1-GE3 Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 2,500 $0.9180
$0.9180 Buy Now
DISTI # SI4164DY-T1-GE3
Avnet Americas Trans MOSFET N-CH 30V 21.5A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4164DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 16 Weeks, 0 Days Container: Reel 0
  • 2,500 $0.7397
  • 5,000 $0.7160
  • 10,000 $0.6922
  • 15,000 $0.6685
  • 20,000 $0.6426
  • 25,000 $0.6125
  • 250,000 $0.5823
$0.5823 / $0.7397 Buy Now
DISTI # SI4164DY-T1-GE3
Avnet Americas Trans MOSFET N-CH 30V 21.5A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4164DY-T1-GE3) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Container: Reel 0
  • 1 $0.7203
  • 10 $0.7030
  • 30 $0.6858
  • 50 $0.6470
  • 100 $0.6297
  • 250 $0.6125
  • 500 $0.5823
$0.5823 / $0.7203 Buy Now
DISTI # 781-SI4164DY-T1-GE3
Mouser Electronics MOSFET 30V Vds 20V Vgs SO-8 RoHS: Compliant 33325
  • 1 $1.5600
  • 10 $1.2900
  • 100 $0.9970
  • 500 $0.8450
  • 1,000 $0.6890
  • 2,500 $0.6160
  • 5,000 $0.5890
  • 10,000 $0.5770
$0.5770 / $1.5600 Buy Now
Future Electronics Single N-Channel 30 V 0.0032 Ohm Surface Mount Power Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 16 Weeks Container: Reel 5000
Reel
  • 2,500 $0.5900
  • 5,000 $0.5750
  • 7,500 $0.5650
$0.5650 / $0.5900 Buy Now
Future Electronics Single N-Channel 30 V 0.0032 Ohm Surface Mount Power Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel 0
Reel
  • 2,500 $0.5900
  • 5,000 $0.5750
  • 7,500 $0.5650
$0.5650 / $0.5900 Buy Now
DISTI # 80575463
Verical Trans MOSFET N-CH 30V 30A 8-Pin SOIC N T/R Min Qty: 2500 Package Multiple: 2500 Date Code: 2324 Americas - 2500
  • 2,500 $0.8462
$0.8462 Buy Now
Bristol Electronics   95
RFQ
Quest Components 21500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET 1038
  • 1 $2.0400
  • 295 $0.9435
  • 637 $0.8415
$0.8415 / $2.0400 Buy Now
DISTI # SI4164DY-T1-GE3
TTI MOSFET 30V Vds 20V Vgs SO-8 pbFree: Pb-Free Min Qty: 2500 Package Multiple: 2500 Container: Reel Americas - 27500
In Stock
  • 2,500 $0.5970
  • 5,000 $0.5830
  • 7,500 $0.5710
$0.5710 / $0.5970 Buy Now
DISTI # SI4164DY-T1-GE3
Avnet Asia Trans MOSFET N-CH 30V 21.5A 8-Pin SOIC N T/R (Alt: SI4164DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 18 Weeks, 0 Days 0
  • 2,500 $0.9096
  • 5,000 $0.8969
  • 7,500 $0.8847
  • 12,500 $0.8727
  • 25,000 $0.8497
  • 62,500 $0.8279
  • 125,000 $0.8073
$0.8073 / $0.9096 Buy Now
Chip1Cloud MOSFET N-CH 30V 30A 8-SOIC 19800
RFQ
Component Electronics, Inc IN STOCK SHIP TODAY 7045
  • 1 $5.3800
  • 100 $4.0400
  • 1,000 $3.5000
$3.5000 / $5.3800 Buy Now
DISTI # SI4164DY-T1-GE3
EBV Elektronik Trans MOSFET N-CH 30V 21.5A 8-Pin SOIC N T/R (Alt: SI4164DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 17 Weeks, 0 Days EBV - 0
Buy Now

Part Details for SI4164DY-T1-GE3

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SI4164DY-T1-GE3 Part Data Attributes:

Parametric Data
SI4164DY-T1-GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SI4164DY-T1-GE3 Vishay Intertechnologies Small Signal Field-Effect Transistor, 30A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOP-8
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOP-8
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer Vishay
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 30 A
Drain-source On Resistance-Max 0.0032 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 6 W
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SI4164DY-T1-GE3

This table gives cross-reference parts and alternative options found for SI4164DY-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI4164DY-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FDS6699S_NL Small Signal Field-Effect Transistor, 21A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation SI4164DY-T1-GE3 vs FDS6699S_NL
FDS7066N3_NL Small Signal Field-Effect Transistor, 23A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, FLMP, SO-8 Fairchild Semiconductor Corporation SI4164DY-T1-GE3 vs FDS7066N3_NL
SI4164DY-T1-GE3 Small Signal Field-Effect Transistor, 21.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8 Vishay Siliconix SI4164DY-T1-GE3 vs SI4164DY-T1-GE3
PHK28NQ03LT,518 N-channel TrenchMOS logic level FET SOIC 8-Pin NXP Semiconductors SI4164DY-T1-GE3 vs PHK28NQ03LT,518
FDS7066N3 Small Signal Field-Effect Transistor, 23A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, FLMP, SO-8 Fairchild Semiconductor Corporation SI4164DY-T1-GE3 vs FDS7066N3
FDS6699S N-Channel PowerTrench® SyncFET™, 30V, 21A, 3.6mΩ, 2500-REEL onsemi SI4164DY-T1-GE3 vs FDS6699S

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