Part Details for RFP8P10 by Fairchild Semiconductor Corporation
Overview of RFP8P10 by Fairchild Semiconductor Corporation
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (8 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (8 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for RFP8P10
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-RFP8P10-ND
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DigiKey | P-CHANNEL POWER MOSFET Min Qty: 1110 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
29973 In Stock |
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$0.2700 | Buy Now |
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Rochester Electronics | 8A, 100V, 0.4ohm, P-Channel Power MOSFET, TO-220AB ' RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 29973 |
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$0.2321 / $0.2730 | Buy Now |
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Chip 1 Exchange | INSTOCK | 153 |
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RFQ |
Part Details for RFP8P10
RFP8P10 CAD Models
RFP8P10 Part Data Attributes:
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RFP8P10
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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Compare Parts:
RFP8P10
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 8A I(D), 100V, 0.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 8 A | |
| Drain-source On Resistance-Max | 0.4 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 75 W | |
| Pulsed Drain Current-Max (IDM) | 20 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for RFP8P10
This table gives cross-reference parts and alternative options found for RFP8P10. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RFP8P10, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF9532 | 10A, 100V, 0.4ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB | Rochester Electronics LLC | RFP8P10 vs IRF9532 |
| MTP8P08 | Power Field-Effect Transistor, 8A I(D), 80V, 0.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Motorola Semiconductor Products | RFP8P10 vs MTP8P08 |
| RFP8P10 | 8A, 100V, 0.4ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB | Intersil Corporation | RFP8P10 vs RFP8P10 |
| RFP8P10 | Power Field-Effect Transistor, 8A I(D), 100V, 0.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Harris Semiconductor | RFP8P10 vs RFP8P10 |
| IRF9532 | Power Field-Effect Transistor, 10A I(D), 100V, 0.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Samsung Semiconductor | RFP8P10 vs IRF9532 |
| MTP8P08 | 8A, 80V, 0.4ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB | Motorola Mobility LLC | RFP8P10 vs MTP8P08 |
| MTP8P10 | 8A, 100V, 0.4ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB | Motorola Mobility LLC | RFP8P10 vs MTP8P10 |
| IRF9532 | Power Field-Effect Transistor, 10A I(D), 100V, 0.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Harris Semiconductor | RFP8P10 vs IRF9532 |