Datasheets
RFP8P06LE by:

8A, 60V, 0.33ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB

Part Details for RFP8P06LE by Intersil Corporation

Overview of RFP8P06LE by Intersil Corporation

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Part Details for RFP8P06LE

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RFP8P06LE Part Data Attributes

RFP8P06LE Intersil Corporation
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RFP8P06LE Intersil Corporation 8A, 60V, 0.33ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer INTERSIL CORP
Reach Compliance Code not_compliant
ECCN Code EAR99
Additional Feature MEGAFET, LOGIC LEVEL COMPATIBLE
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 8 A
Drain-source On Resistance-Max 0.33 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 48 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for RFP8P06LE

This table gives cross-reference parts and alternative options found for RFP8P06LE. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RFP8P06LE, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
RFP8P06LE 8A, 60V, 0.33ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC RFP8P06LE vs RFP8P06LE
Part Number Description Manufacturer Compare
RFP8P06LE Power Field-Effect Transistor, 8A I(D), 60V, 0.33ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, Fairchild Semiconductor Corporation RFP8P06LE vs RFP8P06LE
RFP12N10L 12A, 100V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation RFP8P06LE vs RFP12N10L
RFP2N20 Power Field-Effect Transistor, 2A I(D), 200V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, Fairchild Semiconductor Corporation RFP8P06LE vs RFP2N20
RFP2N20 2A, 200V, 3.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC RFP8P06LE vs RFP2N20
RFP40N10LE 40A, 100V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation RFP8P06LE vs RFP40N10LE
RFP12P08 Power Field-Effect Transistor, 12A I(D), 80V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor RFP8P06LE vs RFP12P08
STP3NA60FI 2.1A, 600V, 4ohm, N-CHANNEL, Si, POWER, MOSFET, ISOWATT220, 3 PIN STMicroelectronics RFP8P06LE vs STP3NA60FI
RFP8P06LE 8A, 60V, 0.33ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC RFP8P06LE vs RFP8P06LE
SPP30N03 Power Field-Effect Transistor, 30A I(D), 30V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TO-220, 3 PIN Infineon Technologies AG RFP8P06LE vs SPP30N03
SSP4N55 Power Field-Effect Transistor, 4A I(D), 550V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Samsung Semiconductor RFP8P06LE vs SSP4N55

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